Provided are a composition for a semiconductor process, which comprises a first component comprising an inorganic acid or an organic acid; and a second component comprising a silicon compound represented by Formula 1, and a semiconductor process, which comprises selectively cleaning and/or removing an organic substance or an inorganic substance using the composition.

The present disclosure generally relates to methods for cleaning the backside of a wafer. A wet cleaning method may be used by stripping off the uppermost spacer layers on the backside of the wafer using a cleaning solution. In one embodiment, hydrogen fluoride (HF) solution may be employed to remove the nitride/oxide spacer layer. In another embodiment, a dry cleaning method may be employed to etch the wafer at the bevel region. Residues are completely removed from the wafer backside. This method improves the yield and storage life of the semiconductor wafers.

An insulating layer structure for a semiconductor product. The insulating layer structure includes a device substrate, a supporting substrate and a thin film layer. The device substrate and the supporting substrate are silicon wafers. The thin film layer(s) is/are arranged on the device substrate or/and the supporting substrate. The device substrate and the supporting substrate are bonded together through the thin film layer arranged on at least one of the device substrate and the supporting substrate to form an integral multilayer SOI structure. The insulating layer structure formed by the present invention solves problems of serious spontaneous heating of an existing SOI device, severe warpage of an existing SOI structure caused by high-temperature annealing, a poor radio frequency characteristic and the like, and has a predictable relatively higher economic and social value.

A substrate processing method includes a liquid film forming step of forming a liquid film of the processing liquid on the upper surface of the substrate; a liquid filling heating step of supplying a heating medium to a space between a heater unit and the substrate to thereby fill the space with the heating medium, and heating the heating medium by the heater unit, an opening defining step of defining an opening in the central region of the liquid film in a state where the substrate is heated in the liquid filling heating step such that the temperature of the substrate is the boiling point of the processing liquid or higher, and an opening enlarging step of enlarging the opening while rotating the base to thereby rotate the substrate. The liquid filling heating step is executed in parallel with the opening enlarging step at least during part of a period of the opening enlarging step.

The present disclosure generally relates to methods for cleaning the backside of a wafer. A wet cleaning method may be used by stripping off the uppermost spacer layers on the backside of the wafer using a cleaning solution. In one embodiment, hydrogen fluoride (HF) solution may be employed to remove the nitride/oxide spacer layer. In another embodiment, a dry cleaning method may be employed to etch the wafer at the bevel region. Residues are completely removed from the wafer backside. This method improves the yield and storage life of the semiconductor wafers.

In equipment that executes a drying process of forming a liquid membrane on a top surface of a substrate W which is held horizontally and gradually enlarging a dry area from which the liquid membrane has been removed, quality of the drying process is determined. Specifically, first, the top surface of the substrate is repeatedly imaged by an imaging unit during execution of the drying process. Then, it is determined whether the dry area is in a normal state based on a plurality of captured images acquired by the imaging. Accordingly, it is possible to quantitatively determine whether a dry area is in a normal state based on a plurality of captured images.

A method of producing a liquid crystal panel includes a first dry-cleaning process of dry cleaning a glass substrate for a liquid crystal panel, a wet-cleaning process of wet cleaning the glass substrate after the first dry-cleaning process, and a second dry-cleaning process of dry cleaning the glass substrate after the wet-cleaning process.

Provided is a method and system for cleaning a substrate with a cleaning system comprising a pre-treatment system using an atomic oxygen generator. The substrate includes a layer to be cleaned and an underlying dielectric layer having a k-value. Pre-treatment gas comprising oxygen and an inert gas are delivered into an atomic oxygen generator, generating a process gas containing atomic oxygen. A portion of a surface of the substrate is exposed to the process gas while controlling two or more cleaning operating variables to ensure meeting two or more cleaning objectives and ensure completion of cleaning in the pre-treatment process time. In an embodiment, cleaning of the substrate in the pre-treatment process is set at less than 100 percent and a subsequent wet cleaning process is used to complete the substrate cleaning. In another embodiment, the pre-treatment system is configured to complete cleaning of the substrate.

When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.

According to one embodiment, a processing apparatus includes a first supply section, a second supply section, a gas supply section, and a sublimation section. The first supply section supplies a first fluid on surfaces of a plurality of workpieces. The second supply section supplies a fluid containing a sublimable material on the surfaces of the plurality of workpieces to which the first fluid is supplied. The gas supply section supplies gas on the surfaces of the plurality of workpieces to which a fluid containing the sublimable material is supplied. The sublimation section sublimates a layer containing the sublimable material formed on each surface of the plurality of workpieces. The gas supply section controls a thickness of the layer containing the sublimable material formed each surface of the plurality of workpieces by controlling a flow velocity of the gas in each surface of the plurality of workpieces.