Provided herein is a method for cleaning a wafer having a fine uneven surface pattern that at least partially contains a silicon element using a wafer cleaning device that includes a vinyl chloride resin as a liquid contacting member, the method including retaining a water-repellent protective film-forming chemical in at least a recessed portion of the uneven pattern to form a water-repellent protective film on a surface of the recessed portion, the water-repellent protective film-forming chemical containing: a monoalkoxysilane represented by the following general formula [1],

(R.sup.1).sub.aSi(H).sub.3-a(OR.sup.2)  [1]; a sulfonic acid represented by the following general formula [2],

R.sup.3—S(═O).sub.2OH  [2]; and a diluting solvent, wherein the diluting solvent contains 80 to 100 mass % of alcohol with respect to the total 100 mass % of the diluting solvent.

Imaging can be performed well even when an imaging device is disposed at a position facing a peripheral portion of a substrate. A substrate processing apparatus 16 which performs a processing of removing a film on a peripheral portion of a substrate W includes a rotating/holding unit 210 configured to hold and rotate the substrate; a first processing liquid supply unit 250A configured to supply a first processing liquid for removing the film onto the peripheral portion of the substrate while the substrate is being rotated in a first rotational direction R.sub.1 by the rotating/holding unit; and an imaging unit 270 provided at a position in front of an arrival region 902 of the first processing liquid on the substrate with respect to the first rotational direction R.sub.1, and configured to image the peripheral portion of the substrate.

Provided is a substrate processing apparatus that removes a film by supplying a processing liquid to the peripheral edge of a substrate. An ejection unit ejects the processing liquid to the peripheral edge of the substrate held and rotated by a substrate holding unit. An ejection position setting unit sets the ejection position of the processing liquid of the ejection unit to correspond to the removal width of the film included in a recipe, and a property information acquisition unit acquires property information of the film to be removed. A correction amount acquisition unit acquires the correction amount for correcting the ejection position of the processing liquid based on the property information of the film, and an ejection position correction unit corrects the ejection position of the processing liquid by the ejection unit based on the correction amount acquired by the correction amount acquisition unit.

There is provided a substrate processing apparatus including: a rotatable holding part configured to rotate a substrate while holding the substrate; a liquid supply part configured to supply a processing liquid to a peripheral edge portion of the substrate held by the rotatable holding part; a sensor configured to detect a temperature distribution at the peripheral edge portion; and a controller configured to execute an operation of detecting a boundary portion between a region of the peripheral edge portion to which the processing liquid adheres and a region of the peripheral edge portion to which the processing liquid does not adhere, based on the temperature distribution.

The disclosed subject matter relates to a rinse and methods of use thereof for removing an edge protection layer and residual hardmask components (e.g., metals) from the edge and at least one proximate surface of a wafer/substrate where the rinse includes acetic acid and/or a halogenated acetic acid of structure (A) wherein R.sub.1 and R.sub.2 are independently hydrogen or a halogen and R.sub.3 is a halogen and (ii) a compound having structure (B) wherein each of R.sub.a, R.sub.b, R.sub.c, R.sub.d, R.sub.e, R.sub.f, R.sub.g and Rh may independently be hydrogen, a substituted or an unsubstituted alkyl group, a substituted or an unsubstituted halogenated alkyl group, a substituted or an unsubstituted alkyl carbonyl group, a halogen, and a hydroxy group.

Provided are an apparatus and a method for treating substrates. The apparatus includes a process chamber, a support plate to support a substrate inside the process chamber, a gas supply unit to supply a gas into the process chamber, a first plasma generation unit provided to generate plasma inside the process chamber, and a second plasma generation unit provided to generate plasma outside the process chamber. An etching process, an ashing process, an edge cleaning process, and a back-surface cleaning process are sequentially performed on the substrate inside the process chamber.

A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

A cleaning solution includes a first solvent having Hansen solubility parameters 25>δ.sub.d>13, 25>δ.sub.p>3, and 30>δ.sub.h>4; an acid having an acid dissociation constant, pKa, of −11<pKa<4, or a base having a pKa of 40 > pKa>9.5; and a surfactant. The surfactant is one or more of an ionic surfactant, a polyethylene oxide and a polypropylene oxide, a non-ionic surfactant, and combinations thereof.

A method includes rendering a cleaning nozzle of a spin coating device below a base plate and out of optimal exposure to a bottom surface and edges of a substrate material placed on a spin chuck in a state of engagement of the base plate with the spin chuck, and rendering the base plate completely under the spin chuck even in the aforementioned state of engagement. In response to disengagement of a lid from the base plate, the method also includes disengaging the base plate from the spin chuck to lower the base plate to a locking point whereupon a portion of the cleaning nozzle below the base plate passes through a hole in the base plate and emerges completely out of and above the base plate, and cleaning the bottom surface and/or the edges of the substrate material utilizing the cleaning nozzle based on an optimal exposure thereof.

The present invention provides a method for treating a substrate, which can remove transition metal-containing substances on a substrate with high efficiency while inhibiting cerium from remaining on the surface of the treated substrate. Furthermore, the present invention provides a method for manufacturing a semiconductor device including the method for treating a substrate, and a kit for treating a substrate that is applicable to the method for treating a substrate. The method for treating a substrate according to an embodiment of the present invention includes a step A of removing a transition metal-containing substance on a substrate by using a chemical solution, which includes a cerium compound and one or more pH adjusters selected from the group consisting of nitric acid, perchloric acid, ammonia, and sulfuric acid, for the substrate having the transition metal-containing substance, and a step B of performing a rinsing treatment on the substrate obtained by the step A by using one or more rinsing solutions selected from the group consisting of a solution including hydrogen peroxide and an acidic aqueous solution which is other than hydrofluoric acid, nitric acid, an aqueous perchloric acid solution, an aqueous oxalic acid solution, and a mixed aqueous solution of these and does not include hydrogen peroxide after the step A.