A substrate cleaning device that includes a rotation holder and a cleaner. The rotation holder includes a rotator provided to be rotatable about a rotation axis, and a holder provided at the rotator to be capable of holding a substrate. The cleaner includes a cleaning tool provided to be capable of removing foreign matter on a back surface of the substrate by polishing, a mover that moves the cleaning tool while pressing the cleaning tool against the back surface of the substrate held by the holder, and a cleaning brush that further cleans the back surface of the substrate, which has been cleaned or is being cleaned by the cleaning tool

The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids. In a case where the chemical solution includes two kinds of first metal components, a content of both the two kinds of first metal components is equal to or smaller than 100 ppm by mass with respect to the total mass of the periodic acids, and a content of at least one of the two kinds of first metal components is equal to or greater than 1 ppt by mass with respect to the total mass of the periodic acids.

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

A substrate processing method is provided, which includes: a substrate holding step of causing a substrate holding unit to hold a substrate; an ozone-containing hydrofluoric acid solution supplying step of supplying an ozone-containing hydrofluoric acid solution containing ozone dissolved therein a hydrofluoric acid solution to one major surface of the substrate held by the substrate holding unit; a brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into contact with the one major surface of the substrate after the ozone-containing hydrofluoric acid solution supplying step; and an ozone water supplying step of supplying ozone water to the one major surface of the substrate before start of the brush-cleaning step after the ozone-containing hydrofluoric acid solution supplying step or in the brush-cleaning step.

A vertical IGBT device is disclosed. The vertical IGBT structure includes an active MOSFET cell array formed in an active region at a front side of a semiconductor substrate of a first conductivity type. One or more column structures of a second conductivity type concentrically surround the active MOSFET cell array. Each column structure includes a column trench and a deep column region. The deep column region is formed by implanting implants of the second conductivity type into the semiconductor substrate through the floor of the column trench. Dielectric side wall spacers are formed on the trench side walls except a bottom wall of the trench and the column trench is filled with poly silicon of the second conductivity type. One or more column structures are substantially deeper than the active MOSFET cell array.

It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au—Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au—Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au—Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

A wafer cleaning method for cleaning contaminants on a wafer is provided, wherein the backside of the wafer has a clear area and an unclear area, and the contaminants are located in the unclear area. The wafer cleaning method includes inspecting the backside of the wafer and generating an inspection signal by an inspection device. The wafer cleaning method includes generating a control signal according to the inspection signal by a process module, wherein the control signal includes movement information of a brush element according to coordinates of the contaminants obtained from the inspection signal. The wafer cleaning method includes controlling the brush element to clean the contaminants on the backside of the wafer according to the control signal by a control device along a predetermined path.

A method for manufacturing a wafer having a functional film, with an outer peripheral part of a top face of the wafer annularly exposed, the method including: spin-coating a high-viscosity coating material that contains a functional film constituent over the top face of the wafer to form a coating film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer and kept rotated to remove the coating film on the outer peripheral part of the top face of the wafer; subsequently, heating the coating film on the wafer to form a fluidity suppressed film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer having the fluidity suppressed film and kept rotated to remove the fluidity suppressed film on the top face of the wafer; and subsequently, heating the fluidity suppressed film on the wafer.