A method includes providing a substrate having a first conductive feature in a first dielectric material layer; forming a first etch stop layer on the first dielectric material layer, wherein the first etch stop layer is formed of a high-k dielectric material; forming a second etch stop layer on the first etch stop layer; forming a second dielectric material layer on the second etch stop layer; forming a pattered mask layer on the second dielectric material layer; forming a first trench in the second dielectric material layer and the second etch stop layer; removing a portion of the first etch stop layer through the first trench to thereby form a second trench, wherein removing the portion of the first etch stop layer includes applying a solution to the portion of the first etch stop layer; and forming a second conductive feature in the second trench.

Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon oxynitride which is formed on the first barrier layer. The water vapor transmission rate (g/m.sup.2/day) at 40 C. and 90% RH in a structure in which the first barrier layer is formed on the base is R.sub.1 and the water vapor transmission rate (g/m.sup.2/day) at 40 C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is R.sub.2, and the ratio of the water vapor transmission rate R.sub.1 to the water vapor transmission rate R.sub.2 (R.sub.1/R.sub.2) is 80 or more and 5000 or less. Hereby, excellent barrier performance can be exhibited under a high-temperature and high-humidity environment.

A fabrication method of a semiconductor piece includes forming a groove that has a first groove portion, and a second groove portion which is a groove portion formed to communicate with a lower part of the first groove portion and extends toward a lower part at a steeper angle than an angle of the first groove portion, has a shape without an angle portion between the first groove portion and the second groove portion, is positioned on the front side, and is formed by dry etching; affixing a retention member including an adhesive layer to the surface in which the groove on the front side is formed; thinning the substrate from the back side of the substrate in a state in which the retention member is affixed; and removing the retention member from the surface after the thinning.

A semiconductor device may include a substrate; a plurality of semiconductor pillars disposed over the substrate and arranged in a first direction and a second direction crossing the first direction; an insulating layer pattern disposed between the substrate and the semiconductor pillars and extending in the second direction; a first conductive line disposed between the insulating layer pattern and the semiconductor pillars and extending in the second direction; a second conductive line formed over sidewalls of the semiconductor pillars and extending in the first direction; and a storage node disposed over each of the semiconductor pillars.

Semiconductor devices and methods of forming the same include forming a first dielectric layer around a semiconductor fin, formed from a first dielectric material, to a target height lower than a height of the semiconductor fin. A second dielectric layer is deposited on the first dielectric layer and is formed from a second dielectric material. A third dielectric layer, formed from the first dielectric material, is formed on the second dielectric layer. The second dielectric layer is etched away to expose a gap on the semiconductor fin. A portion of the semiconductor fin that is exposed in the gap is oxidized to form an isolation layer.

A method for producing a polymer film of high thickness on a substrate including the following steps: a) forming a first thermoplastic polymer film on a first substrate, b) forming a second thermoplastic polymer film on a second substrate including a support substrate covered by an anti-adherent layer, c) bonding the second thermoplastic polymer film to the first thermoplastic polymer film, by thermocompression, by applying a creep temperature higher than the glass transition temperature of the first thermoplastic polymer film and of the second thermoplastic polymer film, whereby a third thermoplastic polymer film is obtained, d) separating the first substrate from the second substrate, the third thermoplastic polymer film separating from the anti-adherent layer and remaining bonded to the first substrate.

A semiconductor device may include a substrate; a plurality of semiconductor pillars disposed over the substrate and arranged in a first direction and a second direction crossing the first direction; an insulating layer pattern disposed between the substrate and the semiconductor pillars and extending in the second direction; a first conductive line disposed between the insulating layer pattern and the semiconductor pillars and extending in the second direction; a second conductive line formed over sidewalls of the semiconductor pillars and extending in the first direction; and a storage node disposed over each of the semiconductor pillars.