A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

Provided is a silicon wafer manufacturing method capable of reducing the warpage of the wafer occurring during a device process and allowing the subsequent processes, which have been suffered from problems due to severe warping of the wafer, to be carried out without problems and its manufacturing method. A silicon wafer manufacturing method according to the present invention is provided with calculating a target thickness of the silicon wafer required for ensuring a warpage reduction amount of a silicon wafer warped during a device process from a relationship between an amount of warpage of a silicon wafer and a thickness thereof occurring due to application of the same film stress to a plurality of silicon wafers having mutually different thicknesses; and processing a silicon single crystal ingot to thereby manufacture silicon wafers having the target thickness.

A method of transferring a thin film from a substrate to a flexible support that includes transfer of the flexible support by a layer of polymer, crosslinkable under ultraviolet light, directly on the thin film, the adhesion energy of the polymer evolving according to its degree of crosslinking, decreasing to an energy point d minimum adhesion achieved for a nominal crosslinking rate, then increasing for a crosslinking rate greater than the nominal crosslinking rate, then apply, on the polymer layer, an ultraviolet exposure parameterized so as to stiffen the polymer layer and have an adhesion energy between the thin film and the flexible support greater than an adhesion energy between the thin film and the substrate, then remove the substrate.

A display panel and a fabricating method are provided. A display panel may include a top substrate, a bottom substrate, and a display medium layer. The display medium layer may be disposed between the top substrate and the bottom substrate. The top substrate may include a support plate and a light shielding layer. The support plate may have a bottom surface facing the display medium layer and a top surface. The support plate includes a recess structure formed at the top surface and encircling an active region of the top substrate. The light shielding layer is disposed on the top surface of the support plate. The recess structure is at least partially located between the active region and the light shielding layer. A bottom surface of the light shielding layer may be further from the bottom surface of the support plate than a bottom surface of the recess structure.

A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.

A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 /sq or less.

A display panel and a fabricating method are provided. A display panel may include a top substrate, a bottom substrate, and a display medium layer. The display medium layer may be disposed between the top substrate and the bottom substrate. The top substrate may include a support plate and a light shielding layer. The support plate may have a bottom surface facing the display medium layer and a top surface. The support plate includes a recess structure formed at the top surface and encircling an active region of the top substrate. The light shielding layer is disposed on the top surface of the support plate. The recess structure is at least partially located between the active region and the light shielding layer. A bottom surface of the light shielding layer may be further from the bottom surface of the support plate than a bottom surface of the recess structure.

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 /sq or less.