A semiconductor device comprising a first circuit component and a second circuit component, the first circuit component having a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a first semiconductor substrate, the second circuit component having a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a second semiconductor substrate, the first and second wiring structures being bonded to each other, their bonding planes being composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, numbers of their atoms satisfying a predetermined equation.

Provided is a silicon wafer manufacturing method capable of reducing the warpage of the wafer occurring during a device process and allowing the subsequent processes, which have been suffered from problems due to severe warping of the wafer, to be carried out without problems and its manufacturing method. A silicon wafer manufacturing method according to the present invention is provided with calculating a target thickness of the silicon wafer required for ensuring a warpage reduction amount of a silicon wafer warped during a device process from a relationship between an amount of warpage of a silicon wafer and a thickness thereof occurring due to application of the same film stress to a plurality of silicon wafers having mutually different thicknesses; and processing a silicon single crystal ingot to thereby manufacture silicon wafers having the target thickness.

Embodiments of the present disclosure describe light emitting displays having a light emitter layer that includes an array of light emitters and a wafer having a driving circuit coupled with the light emitter layer, computing devices incorporating the light emitting displays, methods for formation of the light emitting displays, and associated configurations. A light emitting display may include a light emitter layer that includes an array of light emitters and a wafer coupled with the light emitter layer, where the wafer includes a driving circuit formed thereon to drive the light emitters. Other embodiments may be described and/or claimed.

A bidirectional gate valve including: a blade (200) installed in a valve housing (100) having first and second passage holes (110, 120) to open/close the first and second passage holes (110, 120); a shaft (300) coupled to a lower portion of the blade (200); a first driving block (400) including: a first cylinder (410) which is provided under the valve housing (100) and into which the shaft (300) is inserted; a first piston (420) installed inside the first cylinder (410) and coupled to a lower portion of the shaft(300) to vertically move the shaft (300) according to pressure change inside the first cylinder (410).

A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

The present invention is characterized by including: a blade (200) installed in a valve housing (100) having first and second passage holes (110, 120) to open/close the first and second passage holes (110, 120); a shaft (300) coupled to a lower portion of the blade (200); a first driving block (400) including: a first cylinder (410) which is provided under the valve housing (100) and into which the shaft (300) is inserted; a first piston (420) installed inside the first cylinder (410) and coupled to a lower portion of the shaft (300) to vertically move the shaft (300) according to pressure change inside the first cylinder (410); and horizontal movement guide rollers (430, 430) respectively provided on both outer sides thereof to guide the horizontal movement of the blade 200; a second driving block 500 which is coupled to a lower portion of the first guiding block 400 so as to be vertically movable and which guides the horizontal movement of the blade 200 according to the vertical movement thereof such that the horizontal movement guide rollers (430, 430) are respectively inserted into both inner side surfaces the second driving block 500; a third driving block (600) provided under the second driving block 500 and having therein: first and second mounting parts (610, 620) provided as respective independent spaces; a second piston (611) provided to the first mounting part 610 and coupled to the second driving block 500 to vertically move the second driving block 500 according to pressure change inside the first mounting part (610); and a movement restricting member (621) which is installed to the second mounting part (620) so as to be vertically movable and restricts a downward movement of the second piston (611); and a main body bracket (700) provided under the valve housing (100) to accommodate the first, second, and third driving blocks (400, 500, 600).

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 /sq or less.

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 /sq or less.

A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.

Zinc oxide (ZnO) inherently exhibits n-type behavior due to naturally-occurring oxygen vacancies and zinc interstitials. Many other metal oxide systems have been found to exhibit similar semiconductor characteristics as zinc oxide, i.e. inherently n-type, including other metal oxide semiconductors such as GaO, MgO, CuO, etc. or ternary alloys with zinc oxide such as MgZnO, CdZnO, GaZnO, etc. The method described herein creates stable p-type ZnO or other metal oxide semiconductor materials, by using an oxygen scavenger material, e.g. calcium or tungsten, that is introduced during the formation of the material which preferentially scavenges oxygen resulting in an abundance of zinc vacancies, which act as holes, and induces stable p-type behavior without alloying or being incorporated into the semiconductor material itself. Three deposition techniques to deposit this stable form of p-type material and p+ type material are described.