A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin. Subsequently, a first epitaxial layer is formed on an upper portion of the fin. Later, an undercut is formed on a middle portion the fin. A second epitaxial layer is formed to fill into the undercut. Finally, the fin, the first epitaxial layer and the second epitaxial layer are oxidized to condense the first epitaxial layer and the second epitaxial layer into a germanium-containing nanowire.

A device includes a substrate, a first electrode on the substrate, an insulating pattern on the substrate, a second electrode on an upper end of the insulating pattern, a two-dimensional (2D) material layer on a side surface of the insulating pattern, a gate insulating layer covering the 2D material layer, and a gate electrode contacting the gate insulting layer. The insulating pattern extends from the first electrode in a direction substantially vertical to the substrate. The 2D material layer includes at least one atomic layer of a 2D material that is substantially parallel to the side surface of the insulating pattern.

A substrate includes: a support substrate having a first main surface and a surface layer region which includes at least the first main surface and is formed of any one material selected from the group consisting of boron nitride, molybdenum disulfide, tungsten disulfide, niobium disulfide, and aluminum nitride; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of the material forming the surface layer region. Accordingly, the substrate is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

A stack includes a base portion consisting of silicon carbide and having a first surface that is a Si face and a carbon atom thin film disposed on the first surface and including a first main surface facing the first surface and a second main surface that is a main surface on an opposite side from the first main surface. The carbon atom thin film consists of carbon atoms. The carbon atom thin film includes at least one of a buffer layer that is a carbon atom layer including carbon atoms bonded to silicon atoms forming the Si face and a graphene layer. The second main surface includes a plurality of terraces parallel to the Si face of the silicon carbide forming the base portion and a plurality of steps connecting together the plurality of terraces.

A method for forming alpha-gallium oxide (α-Ga.sub.2O.sub.3) on GaN-compatible substrates uses an epitaxial deposition process comprising (a) forming about one monolayer of wurtzite gallium nitride (w-GaN) on the substrate; (b) reacting the said monolayer of w-GaN with an oxygen precursor to form about one monolayer of α-Ga.sub.2O.sub.3 on the substrate; (c) repeating steps (a) and (b) to form one or more additional monolayers of α-Ga.sub.2O.sub.3 on the substrate.

An object of the present invention is to provide a SiC semiconductor substrate capable of reducing a density of basal plane dislocations (BPD) in a growth layer, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a strained layer removal process S10 that removes a strained layer introduced on a surface of a SiC substrate; and an epitaxial growth process S20 that conducts growth under a condition that a terrace width W of the SiC substrate is increased. When a SiC semiconductor substrate is manufactured in such processes, the basal plane dislocations BPD in the growth layer can be reduced, and a yield of a SiC semiconductor device can be improved.

A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.

Disclosed herein are methods for forming split-gate MOSFETs including a gate shield. In some embodiments, a method may include providing a device structure including a well formed in an epitaxial layer, forming a set of trenches through the well and the epitaxial layer, implanting the device structure to form a gate shield layer at a bottom of each of the set of trenches, and forming a gate spacer layer over the device structure including within the set of trenches.

The present disclosure relates to a wiring circuit, and a method for producing the wiring circuit, that includes graphite wiring having a specified thickness, a high electrical conductivity, and a high carrier mobility. The wiring circuit may include graphite wiring comprised of graphite where the graphite wiring has a thickness of 3 nm or more and less than 300 nm. The graphite may have an electrical conductivity along a graphite film plane direction of 18000 S/cm or more, and the graphite may have a carrier mobility along the graphite film plane direction of 9500 cm.sup.2/Vsec or more. The method for producing a wiring circuit may include steps of: (1) bonding a graphite film with a substrate; (2) plasma etching the graphite film to form a graphite thin film; and (3) etching the graphite thin film to form a wiring circuit.

A method for forming a transition metal dichalcogenide monolayer, which includes depositing a transition metal, a transition metal oxide, or a mixture thereof, on a substrate, introducing a chalcogen precursor to the transition metal, the transition metal oxide, or the mixture thereof, in the presence of an etching gas and a carrier gas at a first temperature, to form a transition metal dichalcogenide on the substrate from the transition metal, the transition metal oxide, or the mixture thereof, and subliming the transition metal dichalcogenide on the substrate in the presence of a pulsating supply of a vapor of the chalcogen precursor to form the transition metal dichalcogenide monolayer at a second temperature, wherein the vapor of the chalcogen precursor comprises a chalcogen vapor.