An image sensor includes a substrate including a photoelectric conversion region, an interlayer insulation layer including an interconnection line and formed on the substrate, a condensing pattern having a first refractive index and including a first region upwardly protruding from the interlayer insulation layer and a second region buried in the interlayer insulation layer, and a color filter formed on the condensing pattern to bury the condensing pattern.

Embodiments of the present disclosure provide an integrated circuit (IC) structure with a metal crack stop and methods of forming the same. An IC structure according to embodiments of the present disclosure can include an insulator positioned over a substrate; a barrier film positioned over the insulator; an interlayer dielectric positioned over the barrier film; and a metal crack stop positioned over the substrate and laterally adjacent to each of the insulator, the barrier film, and the interlayer dielectric, wherein the metal crack stop includes a sidewall having a first recess therein, and wherein a horizontal interface between the barrier film and the interlayer dielectric intersects the sidewall of the metal crack stop.