Embodiments of the present invention are directed to a semiconductor structure and a method for forming a semiconductor structure having a self-aligned dielectric pillar for reducing trench silicide-to-gate parasitic capacitance. In a non-limiting embodiment of the invention, a nanosheet stack is formed over a substrate. A dielectric pillar is positioned adjacent to the nanosheet stack and on a shallow trench isolation region of the substrate. The nanosheet stack is recessed to expose a surface of the shallow trench isolation region and a source or drain (S/D) region is formed on the exposed surface of the shallow trench isolation region. A contact trench is formed that exposes a surface of the S/D region and a surface of the dielectric pillar.

Embodiments of the present invention are directed to a semiconductor structure and a method for forming a semiconductor structure having a self-aligned dielectric pillar for reducing trench silicide-to-gate parasitic capacitance. In a non-limiting embodiment of the invention, a nanosheet stack is formed over a substrate. A dielectric pillar is positioned adjacent to the nanosheet stack and on a shallow trench isolation region of the substrate. The nanosheet stack is recessed to expose a surface of the shallow trench isolation region and a source or drain (S/D) region is formed on the exposed surface of the shallow trench isolation region. A contact trench is formed that exposes a surface of the S/D region and a surface of the dielectric pillar.

A semiconductor device according to the present disclosure includes a semiconductor substrate having an effective region and an ineffective region, an upper surface electrode layer provided on an upper surface of the semiconductor substrate and a rear surface electrode layer provided on a rear surface of the semiconductor substrate, wherein the semiconductor substrate includes a lifetime control layer that is provided in the effective region, a measurement layer provided at an upper surface side of the ineffective region and a crystal defect layer that is provided in the ineffective region, the upper surface electrode layer includes a plurality of measurement electrodes provided on the measurement layer, the measurement layer includes a conducting layer at least at a portion where the plurality of measurement electrodes are provided, and the crystal defect layer is provided between the plurality of measurement electrodes.

In an embodiment, a method includes: dispensing a first dielectric layer around and on a first metallization pattern, the first dielectric layer including a photoinsensitive molding compound; planarizing the first dielectric layer such that surfaces of the first dielectric layer and the first metallization pattern are planar; forming a second metallization pattern on the first dielectric layer and the first metallization pattern; dispensing a second dielectric layer around the second metallization pattern and on the first dielectric layer, the second dielectric layer including a photosensitive molding compound; patterning the second dielectric layer with openings exposing portions of the second metallization pattern; and forming a third metallization pattern on the second dielectric layer and in the openings extending through the second dielectric layer, the third metallization pattern coupled to the portions of the second metallization pattern exposed by the openings.

In an embodiment, a method includes: dispensing a first dielectric layer around and on a first metallization pattern, the first dielectric layer including a photoinsensitive molding compound; planarizing the first dielectric layer such that surfaces of the first dielectric layer and the first metallization pattern are planar; forming a second metallization pattern on the first dielectric layer and the first metallization pattern; dispensing a second dielectric layer around the second metallization pattern and on the first dielectric layer, the second dielectric layer including a photosensitive molding compound; patterning the second dielectric layer with openings exposing portions of the second metallization pattern; and forming a third metallization pattern on the second dielectric layer and in the openings extending through the second dielectric layer, the third metallization pattern coupled to the portions of the second metallization pattern exposed by the openings.

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond malarial having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond malarial having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.

A bipolar transistor includes a collector. The collector is produced by a process wherein a first substantially homogeneously doped layer is formed at the bottom of a cavity. A second gradually doped layer is then formed by diffusion of dopants of the first substantially homogeneously doped layer.

A bipolar transistor includes a collector. The collector is produced by a process wherein a first substantially homogeneously doped layer is formed at the bottom of a cavity. A second gradually doped layer is then formed by diffusion of dopants of the first substantially homogeneously doped layer.

There is provided a technique for suppressing the operation of a parasitic transistor in a semiconductor device having a voltage sense structure. The semiconductor device includes: a semiconductor layer; a first impurity region; a second impurity region; a first semiconductor region; a second semiconductor region; a first electrode; a second electrode; and a third electrode. The second impurity region includes a low lifetime region at least under the second semiconductor region. The low lifetime region is a region having a defect density higher than that in a surface layer of the second impurity region or a region in which a heavy metal is diffused.