A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.

A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.

A semiconductor manufacturing method by a semiconductor manufacturing device includes: positioning an anode, which causes an oxidation reaction, in a first end of a base material containing an aluminum oxide and a cathode, which causes a reduction reaction, in a second end of the base material; heating the base material to melt it with the anode being in contact with the first end of the base material and the cathode being in contact with the second end of the base material; causing a current to flow between the anode and the cathode to cause a molten salt electrolysis reaction for a whole of or a part of a period in which the base material is at least partially melted; and after the molten salt electrolysis reaction, cooling the base material to form a p-type aluminum oxide semiconductor layer and an n-type aluminum oxide semiconductor layer.

A semiconductor manufacturing method by a semiconductor manufacturing device includes: positioning an anode, which causes an oxidation reaction, in a first end of a base material containing an aluminum oxide and a cathode, which causes a reduction reaction, in a second end of the base material; heating the base material to melt it with the anode being in contact with the first end of the base material and the cathode being in contact with the second end of the base material; causing a current to flow between the anode and the cathode to cause a molten salt electrolysis reaction for a whole of or a part of a period in which the base material is at least partially melted; and after the molten salt electrolysis reaction, cooling the base material to form a p-type aluminum oxide semiconductor layer and an n-type aluminum oxide semiconductor layer.

A laser processing method for processing a substrate having a device formed on the front side, an electrode pad being formed on the device. The method includes applying a pulsed laser beam to the back side of the substrate at a position corresponding to the electrode pad, thereby forming a fine hole in the substrate so that the fine hole reaches the electrode pad, detecting first plasma light generated from the substrate by the application of the pulsed laser beam to the substrate and also detecting second plasma light generated from the electrode pad by the application of the pulsed laser beam to the electrode pad, and stopping the laser beam when the second plasma light is detected. Time intervals of the pulsed laser beam repeatedly applied to the same fine hole are set to 0.1 ms or more.

A method includes receiving a semiconductor wafer into a chamber; generating a plasma within the chamber to accelerate particles toward the semiconductor wafer; generating a magnetic field above the semiconductor wafer by an electromagnetic structure contained within the chamber, wherein the electromagnetic structure comprises a plurality of electromagnetic elements; and adjusting the magnetic field, wherein the adjusting of the magnetic field includes moving positions of each of the plurality of electromagnetic elements independently.

Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The second ring component has an inner thickness that is less than an outer thickness, and at least a portion of an upper surface of the second ring component is inwardly angled towards the ring first component. The adjustable tuning ring has an upper surface that contacts the lower surface of the second ring component. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component is varied.

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.

A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.