Methods for creating a conductive feature in a dielectric material are provided. In an embodiment, such a method comprises irradiating a region of a dielectric material having a resistivity of at least 10.sup.8 cm with a focused ion beam, the irradiated region corresponding to a conductive feature embedded in the dielectric material, the conductive feature having a conductivity greater than that of the dielectric material; and forming one or more contact pads of a conductive material in electrical communication with the conductive feature, the one or more contact pads configured to apply a voltage across the conductive feature using a voltage source.

A TFT substrate, a TFT switch and a manufacturing method for the same are disclosed. The method includes steps of disposing a gate electrode layer on a substrate, thinning at least a portion of each side region along a thickness direction of the gate electrode layer in order to form two thin regions, disposing a semiconductor layer above the gate electrode layer, and disposing a source electrode layer and a drain electrode layer on the semiconductor layer, wherein, a contact region between the source electrode layer and the semiconductor layer, and a contact region between the drain electrode layer and the semiconductor layer are respectively corresponding to the two thin regions. The present invention can omit a doping process in order to achieve a good ohmic contact so as to solve a schottky contact problem.

A TFT substrate, a TFT switch and a manufacturing method for the same are disclosed. The method includes steps of disposing a gate electrode layer on a substrate, thinning at least a portion of each side region along a thickness direction of the gate electrode layer in order to form two thin regions, disposing a semiconductor layer above the gate electrode layer, and disposing a source electrode layer and a drain electrode layer on the semiconductor layer, wherein, a contact region between the source electrode layer and the semiconductor layer, and a contact region between the drain electrode layer and the semiconductor layer are respectively corresponding to the two thin regions. The present invention can omit a doping process in order to achieve a good ohmic contact so as to solve a schottky contact problem.

A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 m and an energy density of from 0.1 to 10 J/cm.sup.2 on the surface of the solution film before the solution film dries. An organic semiconductor film having good crystallinity can be formed by the method.

A method is disclosed for doping a semiconductor material comprising the steps of providing a semiconductor material having a first and a second surface. A dopant precursor is applied on the first surface of the semiconductor material. A thermal energy beam is directed onto the second surface of the semiconductor material to pass through the semiconductor material and impinge upon the dopant precursor to dope the semiconductor material thereby.

A polymer, an organic layer composition including the polymer, an organic layer formed from the organic layer composition, and a method of forming patterns using the organic layer composition, the polymer including a moiety represented by Chemical Formula 1:
*-A.sup.1-A.sup.3A.sup.2-A.sup.4.sub.n*.[Chemical Formula 1]

An oxide semiconductor thin-film transistor device includes a gate electrode region, an oxide semiconductor region, a first source/drain electrode region, and a second source/drain electrode region. The oxide semiconductor region has a concentration distribution of an element capable of increasing resistance of an oxide semiconductor. The concentration distribution shows a first concentration at the centroid of a channel region overlapping the gate electrode region in a planar view. The concentration distribution shows a concentration higher than the first concentration in a vicinity of at least a part of a boundary defining an outer end of the channel region.