An organic light emitting diode (“OLED”) display device includes a substrate having a display region including a light emitting region and a peripheral region, and a pad region located in one side of the display region, a plurality of light emitting structures on the substrate in the light emitting region, and a plurality of fan-out wirings including a low fan-out wiring in the peripheral region on the substrate, a middle fan-out wiring on the low fan-out wiring, the middle fan-out wiring overlapping at least a portion of the low fan-out wiring, and an upper fan-out wiring on the middle fan-out wiring, the upper fan-out wiring overlapping at least a portion of the low fan-out wiring.

An organic light emitting diode (“OLED”) display device includes a substrate having a display region including a light emitting region and a peripheral region, and a pad region located in one side of the display region, a plurality of light emitting structures on the substrate in the light emitting region, and a plurality of fan-out wirings including a low fan-out wiring in the peripheral region on the substrate, a middle fan-out wiring on the low fan-out wiring, the middle fan-out wiring overlapping at least a portion of the low fan-out wiring, and an upper fan-out wiring on the middle fan-out wiring, the upper fan-out wiring overlapping at least a portion of the low fan-out wiring.

A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump.

A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump.

A method of making Flat No-Lead Packages with plated lead surfaces exposed on lateral faces thereof. The method includes providing a plurality of Flat No-Lead Packages having severed, unplated lead surfaces exposed on lateral faces thereof and having plated lead surfaces exposed on bottom faces thereof. The method further includes batch electroplating the severed unplated lead surfaces of the plurality of Flat No-Lead Packages.

An electronic package and a method for fabrication the same are provided. The method includes: disposing an electronic component on a substrate; forming an encapsulant layer on the substrate to encapsulate the electronic component; and forming a shielding layer made of metal on the encapsulant layer. The shielding layer has an extending portion extending to a lateral side of the substrate along a corner of the encapsulant layer, without extending to a lower side of the substrate. Therefore, the present disclosure prevents the shielding layer from coming into contact with conductive pads disposed on the lower side of the substrate and thereby avoids a short circuit from occurrence.

An electronic package and a method for fabrication the same are provided. The method includes: disposing an electronic component on a substrate; forming an encapsulant layer on the substrate to encapsulate the electronic component; and forming a shielding layer made of metal on the encapsulant layer. The shielding layer has an extending portion extending to a lateral side of the substrate along a corner of the encapsulant layer, without extending to a lower side of the substrate. Therefore, the present disclosure prevents the shielding layer from coming into contact with conductive pads disposed on the lower side of the substrate and thereby avoids a short circuit from occurrence.

The method for manufacturing a number of electrical nodes, wherein the method includes providing a number of electronic circuits onto a first substrate, such as on a printed circuit board or other electronics substrate, optionally, a low-temperature co-fired ceramic substrate, wherein each one of the electronic circuits includes a circuit pattern and at least one electronics component in connection with the circuit pattern, wherein the electronic circuits are spaced from each other on the first substrate, thereby defining a blank area surrounding each one of the number of electronic circuits, respectively, and providing potting or casting material to embed each one of the number of electronic circuits in the potting or casting material, and, subsequently, hardening, optionally including curing, the potting or casting material to form a filler material layer of the number of electrical nodes.

A thin film transistor includes a gate electrode, an active layer formed of oxide semiconductor material on a substrate, and a gate insulation layer therebetween. The active layer includes a channel region corresponding to the gate electrode, a source region at one side of the channel region, and a drain region at the other side of the channel region. The source region includes a first upper portion and the drain region includes a second upper portion that includes the oxide semiconductor material and Si.

A thin film transistor includes a gate electrode, an active layer formed of oxide semiconductor material on a substrate, and a gate insulation layer therebetween. The active layer includes a channel region corresponding to the gate electrode, a source region at one side of the channel region, and a drain region at the other side of the channel region. The source region includes a first upper portion and the drain region includes a second upper portion that includes the oxide semiconductor material and Si.