A package structure includes a first dielectric layer, a first semiconductor device over the first dielectric layer, a first redistribution line in the first dielectric layer, a second dielectric layer over the first semiconductor device, a second semiconductor device over the second dielectric layer, a second redistribution line in the second dielectric layer, a conductive through-via over the first dielectric layer and electrically connected to the first redistribution line, a conductive ball over the conductive through-via and electrically connected to the second redistribution line, and a molding material. The molding material surrounds the first semiconductor device, the conductive through-via, and the conductive ball, wherein a top of the conductive ball is higher than a top of the molding material.

A component carrier includes a stack having an electrically conductive layer structure, with at least one recess, on an electrically insulating layer structure; a dielectric filling medium filling at least part of the at least one recess; and a further electrically insulating layer structure on the electrically conductive layer structure and on the dielectric filling medium. A method of manufacturing a component carrier includes forming a stack having an electrically conductive layer structure, with at least one recess, on an electrically insulating layer structure; at least partially filling the at least one recess by a dielectric filling medium; and thereafter forming a further electrically insulating layer structure on the electrically conductive layer structure and on the dielectric filling medium.

Schottky diode and method for fabricating the same disclosed. The Schottky diode includes a gallium oxide layer that is a semiconductor layer doped with a first-type dopant, a cathode in ohmic contact with the gallium oxide layer and an anode having a Schottky contact metal layer in Schottky contact with the gallium oxide layer. The gallium oxide layer is in contact with an interface with the Schottky contact metal layer, contains a second-type dopant of a conductivity opposite to that of the first-type dopant, and has an interlayer which is a region where a concentration of the second-type dopant decreases as it moves away from an interface with the Schottky contact metal layer.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.

Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

A thin film transistor includes an active layer and at least one gate stack. The active layer may be formed using multiple iterations of a unit layer stack deposition process, which includes an acceptor-type oxide deposition process and a post-transition metal oxide deposition process. A surface of each gate dielectric within the at least one gate stack contacts a surface of a respective layer of the oxide of the acceptor-type element so that leakage current of the active layer may be minimized. A source electrode and a drain electrode may contact an oxide layer providing lower contact resistance such as a layer of the post-transition metal oxide or a zinc oxide layer within the active layer.

An integrated circuit is provided. The integrated circuit includes a first trace, a second trace and a third trace. The first trace, the second trace and the third trace are each a continuous trace. The first trace, the second trace and the third trace together use only two conductor layers of a semiconductor structure. In a crossing area of the first trace, the second trace and the third trace, the first trace crosses the second trace once, the first trace crosses the third trace once, and the second trace crosses the third trace once.

The invention relates to a method for manufacturing (S) an electronic board (1) comprising the following steps: forming (S1, S4) a cavity (20) in the conductive skin layer (C.sub.1) and in an underlying insulating layer (10), so that at least part of a solder pad (4) is exposed, filling (S5) the cavity (20) with a solder paste (24), placing (S6) an SMD (3) opposite the cavity (20), soldering the SMD (3) on the electronic board (1).

An electronic package and a method for fabricating the same are provided. The method includes: forming a circuit structure on an encapsulant; embedding a first electronic component and a plurality of conductive posts in the encapsulant; and disposing a second electronic component on the circuit structure. Since the first and second electronic components are arranged on opposite sides of the circuit structure, the electronic package can provide multi-function and high efficiency.