An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

An embodiment method includes providing a wafer including a first integrated circuit die, a second integrated circuit die, and a scribe line region between the first integrated circuit die and the second integrated circuit die. The method further includes forming a kerf in the scribe line region and after forming the kerf, using a mechanical sawing process to fully separate the first integrated circuit die from the second integrated circuit die. The kerf extends through a plurality of dielectric layers into a semiconductor substrate.

The present invention relates to an adhesive resin composition for a semiconductor, including: a (meth)acrylate-based resin including a (meth)acrylate-based repeating unit containing an epoxy-based functional group and a (meth)acrylate-based repeating unit containing an aromatic functional group, the (meth)acrylate-based resin having a hydroxyl equivalent weight of 0.15 eq/kg or less; a curing agent including a phenol resin having a softening point of 100 C. or higher; and an epoxy resin, wherein the content of a (meth)acrylate-based functional group containing an aromatic functional group in the (meth)acrylate-based resin is 2 to 40% by weight, an adhesive film for a semiconductor including the above adhesive resin composition for a semiconductor, a dicing die bonding film including an adhesive layer including the adhesive film for a semiconductor, and a method for dicing a semiconductor wafer using the dicing die bonding film.

Provided are a flip chip laser bonding apparatus and a flip chip laser bonding method, and more particularly, to an apparatus and method for flip chip laser bonding, in which a semiconductor chip in a flip chip form is bonded to a substrate by using a laser beam. According to the flip chip laser bonding apparatus and the flip chip laser bonding method, even a semiconductor chip that is bent or is likely to bend may also be bonded to a substrate without contact failure of solder bumps by bonding the semiconductor chip to the substrate by laser bonding while pressurizing the semiconductor chip.

Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.

Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Provided are a semiconductor chip bonding apparatus and a semiconductor chip bonding method, and more particularly, to an apparatus and method of bonding a semiconductor chip to an upper surface of a substrate or another semiconductor chip. According to the semiconductor chip bonding apparatus and the semiconductor chip bonding method, productivity may be increased by quickly and accurately bonding a semiconductor chip to a substrate or another semiconductor chip.

A method for producing a plurality of components and a component are disclosed. In an embodiment the method includes providing a carrier composite comprising a base body and a planar connecting surface, providing a wafer composite comprising a semiconductor body composite and a planar contact surface, connecting the wafer composite to the carrier composite thereby forming a joint composite so that the planar contact surface and the planar connecting surface are joined forming a joint boundary surface. The method further includes reducing inner mechanical stress in the joint composite so that a material of the carrier composite is removed in places, wherein the joint composite is thermally treated in order to form a permanent mechanically-stable connection between the wafer composite and the carrier composite, and wherein reducing inner stress is effected prior to the thermal treatment.

Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.