Provided is a heat dissipating substrate including a diamond substrate, wherein an upper portion of the diamond substrate has a concave-convex structure including recessed regions that are spaced apart from each other, and insulation patterns that fill the recessed regions. The insulation patterns include at least one of silicon carbide, silicon nitride, silicon oxide, aluminum nitride, and aluminum oxide.

A method to produce a flexible substrate is described. A base film material of cyclo-olefin polymer (COP) is provided. A surface of the COP base film is irradiated with UV light to form a functional group on the COP surface. Thereafter, the surface is treated with an alkaline degreaser. Thereafter, a Ni—P seed layer is electrolessly plated on the surface. A photoresist pattern is formed on the Ni—P seed layer. Copper traces are plated within the photoresist pattern. The photoresist pattern is removed and the Ni—P seed layer not covered by the copper traces is etched away to complete the flexible substrate. Alternatively, a biocompatible flexible substrate is formed using a Ni—P seed layer with a biocompatible surface finishing instead of copper.

A method of fabricating a semiconductor device can include providing an integrated circuit electrically coupled to a metallization pad on a semiconductor wafer, the integrated circuit and the metallization pad covered by a cap structure. A channel can be cut in a portion of the cap structure that covers the metallization pad using a cutting tool having a tip surface and a beveled side surface to expose an upper surface of the metallization pad in the channel extending in a first direction and a conductive material can be deposited in the channel to ohmically contact the upper surface of the metallization pad in the channel.

A manufacturing method of an insert case for a semiconductor device includes: placing a terminal inside a mold and fixing a central portion of the terminal by bringing a slide core into contact with the central portion of the terminal; with the central portion of the terminal fixed by the slide core, filling an inside of the mold with resin to mold an insert case; and separating the slide core from the terminal and taking out the insert case from the mold.

A semiconductor package device includes an interposer die having a semiconductor substrate and a plurality of through-silicon-vias (TSVs) extending through the semiconductor substrate. The semiconductor package device also includes a first semiconductor die spaced apart from the interposer die, a first redistribution layer disposed on a first side of the interposer die and electrically coupling the interposer die with the first semiconductor die, and a second redistribution layer on a second side of the interposer die opposite the first side. Each of the plurality of TSVs includes a sidewall tapering from a first end near the second redistribution layer to a second end near the first redistribution layer.

Embodiments of a silicon heat-dissipation package for compact electronic devices are described. In one aspect, a device includes first and second silicon cover plates. The first silicon cover plate has a first primary side and a second primary side opposite the first primary side thereof. The second silicon cover plate has a first primary side and a second primary side opposite the first primary side thereof. The first primary side of the second silicon cover plate includes an indentation configured to accommodate an electronic device therein. The first primary side of the second silicon cover plate is configured to mate with the second primary side of the first silicon cover plate when the first silicon cover plate and the second silicon cover plate are joined together with the electronic device sandwiched therebetween.

The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

A microelectronic device, in a multirow gull-wing chip scale package, has a die connected to intermediate pads by wire bonds. The intermediate pads are free of photolithographically-defined structures. An encapsulation material at least partially surrounds the die and the wire bonds, and contacts the intermediate pads. Inner gull-wing leads and outer gull-wing leads, located outside of the encapsulation material, are attached to the intermediate pads. The gull-wing leads have external attachment surfaces opposite from the intermediate pads. The external attachment surfaces of the outer gull-wing leads are located outside of the external attachment surfaces of the inner gull-wing leads. The microelectronic device is formed by mounting the die on a carrier, forming the intermediate pads without using a photolithographic process, and forming the wire bonds. The encapsulation material is formed, and the carrier is subsequently removed, exposing the intermediate pads. The gull-wing leads are formed on the intermediate pads.

It is an object of the present invention to provide a semiconductor device having high heat dissipation performance. A semiconductor device includes: a diamond substrate having a recess in an upper surface thereof; a nitride semiconductor layer disposed within the recess in the upper surface of the diamond substrate; and an electrode disposed on the nitride semiconductor layer, wherein the nitride semiconductor layer and the electrode constitute a field-effect transistor, the diamond substrate has a source via hole extending through a thickness of the diamond substrate to expose the source electrode, and the semiconductor device further includes a via metal covering an inner wall of the source via hole and a lower surface of the diamond substrate.

A substrate structure, a package structure, and a method for manufacturing an electronic package structure provided. The substrate structure includes a dielectric layer, a trace layer, and at least one wettable flank. The dielectric layer has a first surface and a second surface opposite to the first surface. The trace layer is embedded in the dielectric layer and exposed from the first surface of the dielectric layer. The at least one wettable flank is stacked with a portion of the trace layer embedded in the dielectric layer.