A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.

A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 m to 10 m. A high-frequency device is also provided.

A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.

A device that includes a substrate, a first component coupled to the substrate, a second component coupled to the substrate, an encapsulation layer formed over the substrate such that the encapsulation layer encapsulates the first component and the second component, and a shielding layer formed over a first surface of the encapsulation layer. The shielding layer includes a first portion formed in a first cavity of the encapsulation layer. The first cavity is located between the first component and the second component. The first portion of the shielding layer provides a compartmental electromagnetic (EM) shield between the first component and the second component.

Disclosed are a conductive particle, an anisotropic conductive film, a display device, and a method for fabricating the same so as to detect the extent to which the conductive particles are cracked in a heating and pressurizing process, to thereby improve the ratio of finished products while the display device is being manufactured. A core of the conductive particle is a fluorescent resin core. In the conductive particle according to this disclosure, the core of the conductive particle is a fluorescent resin core, and the extent to which the conductive particle is cracked can be detected by detecting varying fluorescence in a heating and pressuring process, to thereby alleviate such a phenomenon from taking place that the conductive particle has a poor electrical conductivity due to an insufficient pressure, or the conductive particle is cracked, and thus loses its electrical conductivity, due to an excessive pressure.

Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.

An electronic device is provided. The electronic device includes a first substrate. The electronic device also includes a multilayer electrode disposed on the first substrate. The multilayer electrode includes a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The electronic device further includes a second substrate facing the first substrate. In addition, the electronic device includes a working medium disposed between the first substrate and the second substrate. The chemical electromotive force of the second conductive layer is between that of the first conductive layer and the third conductive layer.

A method for interconnecting components of an electronic system includes depositing a sintering solution onto a first component to form an interconnection layer, the sintering solution comprising a solvent, metal nanoparticles dispersed in the solvent, and a stabilizing agent adsorbed onto the nanoparticles. More than 95.0%, preferably more than 99.0% of the mass of the nanoparticles include a metal selected from silver, gold, copper and alloys thereof and have a polyhedral shape with an aspect ratio greater than 0.8. The method also includes eliminating, at least partially, the solvent from the layer to form an ordered agglomerate in which the nanoparticles are regularly disposed in three axes, the stabilizing agent binding them together and maintaining at least a portion of the nanoparticles at a distance from each other, debinding and sintering the layer, and depositing a second component in contact with the layer before or during debinding or sintering.

An electronic device module includes a substrate, at least one first component and at least one second component disposed on one surface of the substrate, a shielding wall disposed between the at least one first component and the at least one second component, and disposed on the substrate, and a sealing portion having the at least one first component, the at least one second component and the shielding wall embedded therein, and disposed on the substrate. The shielding wall includes at least one insulating layer and at least one conductive layer disposed on the insulating layer.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a first package and a second package. The first package includes a first substrate, an electronic component, a trace layer, and a first conductive structure. The first substrate has a first surface and a second surface opposite to the first surface. The electronic component is embedded in the first substrate. The trace layer has an uppermost conductive layer embedded in the first substrate and exposed from the first surface of the first substrate. The first conductive structure electrically connects the trace layer to the second surface of the first substrate. The second package is disposed on the first surface of the first substrate of the first package.