Embodiments described herein provide techniques for using a stress absorption material to improve solder joint reliability in semiconductor packages and packaged systems. One technique produces a semiconductor package that includes a die on a substrate, where the die has a first surface, a second surface opposite the first surface, and a sidewall surface coupling the first surface to the second surface. The semiconductor package further includes a stress absorption material contacting the sidewall surface of the die and a molding compound separated from the sidewall surface of the die by the stress absorption material. The Young's modulus of the stress absorption material is lower than the Young's modulus of the molding compound. One example of a stress absorption material is a photoresist.

A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

An electronic device, a lead frame, and a method, including providing a lead frame with a Y-shaped feature having branch portions connected to a dam bar in a prospective gap in an equally spaced repeating lead pitch pattern, and a set of first leads extending parallel to one another along a first direction and spaced apart from one another along a second direction in lead locations of the repeating lead pitch pattern, attaching a semiconductor die to a die attach pad of the lead frame, attaching bond wires between bond pads of the semiconductor die, and the first leads, enclosing first portions of the first leads, the die attach pad, and a portion of the semiconductor die in a package structure, and performing a dam bar cut process that cuts through portions of the dam bar between the lead locations of the repeating lead pitch pattern.

An electronic device, a lead frame, and a method, including providing a lead frame with a Y-shaped feature having branch portions connected to a dam bar in a prospective gap in an equally spaced repeating lead pitch pattern, and a set of first leads extending parallel to one another along a first direction and spaced apart from one another along a second direction in lead locations of the repeating lead pitch pattern, attaching a semiconductor die to a die attach pad of the lead frame, attaching bond wires between bond pads of the semiconductor die, and the first leads, enclosing first portions of the first leads, the die attach pad, and a portion of the semiconductor die in a package structure, and performing a dam bar cut process that cuts through portions of the dam bar between the lead locations of the repeating lead pitch pattern.

A semiconductor packaging structure manufactured in a manner which does not leave the chip damaged or susceptible to damage upon the removal of temporary manufacturing supports includes at least one electrical conductor, at least one conductive layer, a chip, and a colloid. The chip is spaced from the conductive layer, the electrical conductor is disposed between the conductive layer and the chip and electrically connects the conductive layer to the chip. The colloid covers all outer surfaces of the chip. A method of fabricating such a semiconductor packaging structure is also provided.

A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.

The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a first substrate having an upper surface and a recessed surface extending in a closed loop around the upper surface. The recessed surface is vertically between the upper surface and a lower surface of the first substrate opposing the upper surface. A first plurality of interconnects are disposed within a first dielectric structure on the upper surface. A dielectric protection layer is over the recessed surface, along a sidewall of the first dielectric structure, and along a sidewall of the first substrate. The first substrate extends from directly below the dielectric protection layer to laterally outside of the dielectric protection layer.

The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a first substrate having an upper surface and a recessed surface extending in a closed loop around the upper surface. The recessed surface is vertically between the upper surface and a lower surface of the first substrate opposing the upper surface. A first plurality of interconnects are disposed within a first dielectric structure on the upper surface. A dielectric protection layer is over the recessed surface, along a sidewall of the first dielectric structure, and along a sidewall of the first substrate. The first substrate extends from directly below the dielectric protection layer to laterally outside of the dielectric protection layer.

A package structure and a formation method of a package structure are provided. The method includes forming a conductive structure over a carrier substrate. The conductive structure has a lower portion and an upper portion, and the upper portion is wider than the lower portion. The method also includes disposing a semiconductor die over the carrier substrate. The method further includes forming a protective layer to surround the conductive structure and the semiconductor die. In addition, the method includes forming a conductive bump over the conductive structure. The lower portion of the conductive structure is between the conductive bump and the upper portion of the conductive structure.