A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

A semiconductor package includes a semiconductor die including circuitry electrically coupled to bond pads that is mounted onto a leadframe. The leadframe includes a plurality of leads and a dam bar having a transverse portion that extends between adjoining ones of the leads. The bond pads are electrically connected to the plurality of leads. A raised dam pattern is on the dam bar or on an edge of an exposed portion of a top side clip of the semiconductor package that is positioned above and connects to the semiconductor die. The raised dam pattern includes a first material that is different relative to the material of the dam bar or the clip. A mold material encapsulates the semiconductor die.

A semiconductor package includes a semiconductor die including circuitry electrically coupled to bond pads that is mounted onto a leadframe. The leadframe includes a plurality of leads and a dam bar having a transverse portion that extends between adjoining ones of the leads. The bond pads are electrically connected to the plurality of leads. A raised dam pattern is on the dam bar or on an edge of an exposed portion of a top side clip of the semiconductor package that is positioned above and connects to the semiconductor die. The raised dam pattern includes a first material that is different relative to the material of the dam bar or the clip. A mold material encapsulates the semiconductor die.

A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.

A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.

A foil-based package and a method for manufacturing a foil-based package includes, among other things, a first and a second foil substrate. An electronic component is arranged between the two foil substrates in a sandwich-like manner. Due to the component thickness, there is a distance difference between the two foil substrates between the mounting area of the component and ears outside of the mounting area. The foil-based package and the method provides means for reducing and/or compensating a distance difference between the first foil substrate and the second foil substrate caused by the component thickness.

A foil-based package and a method for manufacturing a foil-based package includes, among other things, a first and a second foil substrate. An electronic component is arranged between the two foil substrates in a sandwich-like manner. Due to the component thickness, there is a distance difference between the two foil substrates between the mounting area of the component and ears outside of the mounting area. The foil-based package and the method provides means for reducing and/or compensating a distance difference between the first foil substrate and the second foil substrate caused by the component thickness.

Ceramic interposers in a disaggregated-die semiconductor package allow for useful signal integrity and interconnecting components. Low-loss ceramics are used to tune ceramic interposers for a die assembly that may have components from different process-technology nodes.

A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.