H01L21/60

Method for manufacturing multilayer printed wiring board and multilayer printed wiring board
11277924 · 2022-03-15 · ·

A method for manufacturing a multilayer printed wiring board includes: preparing a first wiring board that includes a circuit region formed with one or more signal lines on a main surface of a first insulating substrate; preparing a second wiring board that includes an electrically conductive layer on a main surface of a second insulating substrate; disposing a spacer at a position spaced apart from an outer edge of the circuit region by a predetermined distance along at least a part of the outer edge; disposing an adhesive layer on the circuit region so that a space is provided between the adhesive layer and the spacer; and laminating the first wiring board and the second wiring board for thermocompression bonding.

Component carrier and method of manufacturing the same
11289452 · 2022-03-29 · ·

A method of manufacturing a component carrier includes a step of stacking and connecting a first component and a second component to one another to form a cluster and thereafter, a step of inserting the cluster into a cavity of a base structure. A component carrier has a base structure with a cavity; a cluster having a first component stacked and connected with a second component, wherein the cluster is arranged in the cavity. A height difference between opposing lateral sidewalls of the cluster is less than 15 μm.

SEMICONDUCTOR MODULE MANUFACTURING METHOD, ELECTRONIC EQUIPMENT MANUFACTURING METHOD, SEMICONDUCTOR MODULE, AND ELECTRONIC EQUIPMENT
20220102330 · 2022-03-31 ·

A chip component including a first electrode and a second electrode, a semiconductor device including a first land and a second land, and a printed wiring board are prepared. A first solder paste and a second solder paste are supplied to the printed wiring board. The chip component is placed on the printed wiring board so that the first electrode is in contact with the first solder paste and the second electrode is in contact with the second solder paste. The semiconductor device is placed on the printed wiring board so that the first land faces the first electrode and the second land faces the second electrode. The solder paste is heated and melted, the first land and the first electrode are bonded to each other, and the second land and the second electrode are bonded to each other.

SEMICONDUCTOR MODULE MANUFACTURING METHOD, ELECTRONIC EQUIPMENT MANUFACTURING METHOD, SEMICONDUCTOR MODULE, AND ELECTRONIC EQUIPMENT
20220102330 · 2022-03-31 ·

A chip component including a first electrode and a second electrode, a semiconductor device including a first land and a second land, and a printed wiring board are prepared. A first solder paste and a second solder paste are supplied to the printed wiring board. The chip component is placed on the printed wiring board so that the first electrode is in contact with the first solder paste and the second electrode is in contact with the second solder paste. The semiconductor device is placed on the printed wiring board so that the first land faces the first electrode and the second land faces the second electrode. The solder paste is heated and melted, the first land and the first electrode are bonded to each other, and the second land and the second electrode are bonded to each other.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device of an embodiment includes: dividing a semiconductor wafer including a plurality of chip areas each having a columnar electrode and dicing areas, along the dicing areas to form a plurality of semiconductor chips; sticking a first resin film on the plurality of semiconductor chips while filling parts of the first resin film in gaps each present between adjacent ones of the plurality of semiconductor chips; forming trenches narrower in width than the gaps in the first resin film filled in the gaps; and sequentially picking up the plurality of semiconductor chips each having the first resin film, and mounting the picked semiconductor chip on a substrate.

Scalable semiconductor interposer integration
11302617 · 2022-04-12 · ·

An electronic package comprising a first substrate that includes a first plurality of substrate vias and one or more cavities, a second substrate that includes a second plurality of substrate vias and one or more cavities, and a standoff substrate(s). The standoff substrate(s)positioned between the first and second substrate, the standoff substrate(s) is affixed to each of the first and second substrate, standoff substrate(s) forms a clearance between the first and second substrate, the standoff substrate(s) comprises an intervening plurality of substrate vias passing through the entire thickness of the standoff substrate(s), and a portion of the second plurality of substrate vias are configured to be or capable of being electrically connected to a portion of the first plurality of substrate vias by way of a portion of the intervening plurality of substrate vias.

Apparatus with embedded fine line space in a cavity, and a method for forming the same

An apparatus is provided which comprises: a cavity made in a substrate of a printed circuit board (PCB); a plurality of solder balls embedded in the cavity; and a horizontal trace within the substrate, wherein the horizontal trace is partially directly under the plurality of solder balls and is coupled to the plurality of solder balls and another trace or via in the substrate such that a substrate region under the plurality of solder balls is independent of a stop layer under the cavity.

Semiconductor device and semiconductor device fabrication method
11267076 · 2022-03-08 · ·

A semiconductor device, including a semiconductor element, and a first wiring member and a second wiring member bonded to each other and being electrically connected to the semiconductor element. The first wiring member has an irradiation area for receiving irradiation of a laser beam. The semiconductor device also includes a protection member disposed on an area of the second wiring member opposite the irradiation area of the first wiring member, the protection member having a melting point higher than a melting point of at least one of the first wiring member and the second wiring member including the area on which the protection member is disposed.

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
20210335700 · 2021-10-28 ·

A semiconductor device includes a semiconductor package equipped with a plurality of electrodes and a mount member which is equipped with a plurality of lands and on which the semiconductor package is mounted. The semiconductor package has the electrodes joined to the lands through solders. One of the electrodes is designed as a position/orientation control electrode for the semiconductor package. One of the lands is designed as a position/orientation control land for the semiconductor package. The position/orientation control land is arranged inside the position/orientation control electrode in a planar view thereof and includes a plurality of first extensions which extend in different radial directions about the center of the semiconductor package. The position/orientation control electrode includes a plurality of second extensions which extend along the first extensions. Each of the first extension has an outer portion which is located outside an outer line of a facing one of the second extensions. The outer portions are arranged to be symmetrical with respect to the center of the semiconductor package.

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
20210335700 · 2021-10-28 ·

A semiconductor device includes a semiconductor package equipped with a plurality of electrodes and a mount member which is equipped with a plurality of lands and on which the semiconductor package is mounted. The semiconductor package has the electrodes joined to the lands through solders. One of the electrodes is designed as a position/orientation control electrode for the semiconductor package. One of the lands is designed as a position/orientation control land for the semiconductor package. The position/orientation control land is arranged inside the position/orientation control electrode in a planar view thereof and includes a plurality of first extensions which extend in different radial directions about the center of the semiconductor package. The position/orientation control electrode includes a plurality of second extensions which extend along the first extensions. Each of the first extension has an outer portion which is located outside an outer line of a facing one of the second extensions. The outer portions are arranged to be symmetrical with respect to the center of the semiconductor package.