A bonding system includes a surface modifying apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate with plasma of a processing gas. The bonding apparatus is configured to bond two substrates modified by the surface modifying apparatus by an intermolecular force. The surface modifying apparatus includes: a processing chamber configured to accommodate therein the substrate; a processing gas supply configured to supply a processing gas containing moisture into the processing chamber; and a plasma forming unit configured to form the plasma of the processing gas containing the moisture.

A wafer processing method includes a liquid layer forming step of forming a layer of a liquid on a supporting face of a wafer table included in a supporting unit, a fixing step of placing a side of an adhesive sheet of the wafer on the wafer table on which the layer of the liquid has been formed, and fixing the wafer to the wafer table through the adhesive sheet, a detecting step of imaging the wafer with an imaging unit which is positioned opposite to the supporting face of the wafer table to thereby detect the division lines formed on the front side of the wafer, and a processing step of processing a portion on a back side of the wafer corresponding to each of the division lines.

This patent application relates to methods and apparatus for temperature modification and reduction of contamination in bonding stacked microelectronic devices with heat applied from a bond head of a thermocompression bonding tool. The stack is substantially enclosed within a skirt carried by the bond head to reduce heat loss and contaminants from the stack, and heat may be added from the skirt.

There is provided a touch panel that displays an image in which a plurality of functional buttons are arranged. The plurality of buttons include a long-touch button a function of which can be rendered active after the button is continuously touched for a predetermined time period, and attendant on the long-touch button, a count-down signal notifying a time period remaining before a timing at which the function can be rendered active is displayed.

A holding unit of a processing apparatus includes a chuck table for holding the wafer thereon and a table base on which the chuck table is detachably supported. The chuck table includes a porous plate having an attracting surface for attracting the wafer thereto, a frame assembly surrounding a portion of the porous plate other than the attracting surface, a cooling water channel that is defined in the frame assembly and guides cooling water to an entire inner area of the frame assembly, a wafer suction hole that is defined in the frame assembly and transmits a suction force to the attracting surface of the porous plate, and a bolt hole defined in the frame assembly to fasten the chuck table to the table base.

Energy is locally supplied to a cutting surface that is formed in an outer circumferential region of a wafer in a trimming step, before a grinding step of grinding the wafer. This can remove or repair at least part of a damage layer formed in the outer circumferential region of the wafer due to the trimming step. As a result, breakage of the wafer that originates from the outer circumferential region in the grinding of the wafer which has been subjected to the edge trimming and generation of dust in a step after this grinding can be suppressed.

Various embodiments of wafer bonding apparatuses and methods are described herein for reducing distortion in a post-bonded wafer pair. More specifically, the present disclosure provides embodiments of wafer bonding apparatuses and methods to reduce post-bond wafer distortion that occurs primarily within the center and/or the edge of the post-bonded wafer pair. In the present disclosure, post-bonded wafer distortion is reduced by correcting for variations in the pre-bond wafer shapes. Variations in pre-bond wafer shape are corrected, or compensated for, by making hardware modifications to the wafer chuck. Such modifications may include, but are not limited to, modifications to the surface height and/or the temperature of the wafer chuck. Although hardware modifications are disclosed herein for reducing post-bond wafer distortion near the center and/or the edge of the post-bonded wafer pair, similar modifications can be made to reduce post-bond wafer distortion within other areas or zones of the post-bonded wafer pair.

A frame jig for manufacturing a semiconductor package includes a frame body of a rectangular shape attached to a package structure of a panel shape, wherein the frame body comprises polyphenylene sulfide.

A support device (10) includes a substrate receiving region. The support device (10) includes a support body (110) shaped as a pattern having an array of openings (130). The support body (110) is a sparse structure wherein a joint area of the openings of the array of openings (130) is 40% or more of the area of the substrate receiving region. The support body (110) includes one or more suction openings (140) configured to be in fluid communication with a vacuum source arrangement.

The controller executes a first process of moving a support portion so that inside the peripheral edge of an object, a focusing position moves along the peripheral edge, thereby forming a first modified region, and following the first process, executes a second process of moving the support portion so that the focusing position moves, thereby forming a second modified region The measurement data acquiring portion, at execution of the first process, acquires measurement data associated with position information on a position of the object. The controller, at execution of the second process, causes the driving portion to shift a position of the condenser lens, the position being along the direction of an optical axis, to an initial position based on the measurement data acquired in the first process, before or when the focusing position moves from outside of the object to inside thereof.