The disclosure is a bonding machine for warped substrates, which includes a first chamber, a second chamber, a pressing unit, a carrier and a plurality of flattening devices. The first chamber is configured to connect with the second chamber to define an enclosed space therebetween. The pressing unit is connected to the first chamber, and the carrier is connected to the second chamber. The pressing unit faces the carrier and is configured to bond the substrates placed on the carrier. The flattening devices are arranged on the carrier, and include a plurality of flattening units and a plurality of telescopic rotary motors. The flattening units are located around the substrate. The telescopic rotation motor is connected to and drives the flattening unit to rotate, move up and down to flatten the substrate placed on the carrier to improve the accuracy of aligning the substrate.

A device wafer processing method includes a holding step of holding a face side of a device wafer by a holding table, a cutting step of cutting the device wafer by a cutting blade from a reverse side of the device wafer along streets and forming cutting grooves that do not reach a functional layer, and a laser processing step of applying a laser beam having a wavelength absorbable by the device wafer to the device wafer from the reverse side of the device wafer along the cutting grooves and dividing the device wafer into individual devices. The laser processing step is carried out in a state in which the device wafer is continuously held on the holding table without being unloaded from the holding table, after the cutting step is carried out.

A laminate substrate is divided along a plurality of intersecting scheduled division lines. The laminate substrate has a first substrate and a second substrate formed of the same material, laminated through an intermediate layer containing metal. The laminate substrate is divided by cutting the laminate substrate along the scheduled division lines by use of a substrate cutting blade to form the first substrate with first cut grooves each having a width larger than a cutting edge thickness of a metal cutting blade which is larger in cutting edge thickness than the substrate cutting blade, and thereafter cutting the laminate substrate along the first cut grooves by use of the metal cutting blade to cut the intermediate layer and to form second cut grooves each having a width corresponding to the cutting edge thickness of the metal cutting blade.

Provided are a laser machining device and a laser machining method capable of stably operating an autofocus function without causing an unfavorable state such as an overshoot etc. A laser machining device and a laser machining method of the present invention performs a normal AF (autofocus) control when a scan position of the machining laser light and the detecting laser light is located in a work central portion, and performs a slow-tracking AF (autofocus) control with a trackability to a displacement of a main surface of a work reduced to be lower than a trackability of the normal AF control when the scan position of the machining laser light and the detecting laser light is located in a work end portion.

An ultrasonic water jet apparatus includes a water accumulation part in which the water supplied from a water supply source is temporarily accumulated, a jet port that jets the water accumulated in the water accumulation part, and a piezoelectric vibration plate including a dome part that is disposed opposed to the jet port in the water accumulation part and propagates the ultrasonic vibration to the water accumulated in the water accumulation part, a flange part that projects outward in the radial direction from a peripheral edge of the dome part, and an annular plate that projects outward in the radial direction from a peripheral edge of the flange part.

In a wafer to wafer bonding method, a first wafer is vacuum suctions on a first surface of a lower stage and a second wafer is vacuum suctioned on a second surface of an upper stage. Pressure is applied to a middle portion of the first wafer by a lower push rod and pressure is applied to a middle portion of the second wafer by an upper push rod. Bonding of the first and second wafers propagates radially outwards. A bonding propagation position of the first and second wafers is detected. A ratio of protruding lengths of the lower push rod and the upper push rod is changed according to the bonding propagation position.

A processing apparatus includes a chuck table, a processing unit configured to process a workpiece held on the chuck table, a height measuring unit fitted to the processing unit, the height measuring unit measuring, as height data, heights at a plurality of coordinates of the holding surface measured while a moving unit is moved, a reading unit capable of reading an information medium, and a control unit. The chuck table includes an information medium on which identifying information distinguishing the chuck table is recorded. The control unit includes a height data recording section configured to record the height data and the identifying information in association with each other, and a processing control section configured to control a height of the processing unit during processing on the basis of the height data associated with the identifying information read by the reading unit.

A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

A substrate suction stage including a substrate support unit having a top surface, a cavity formed therein, an ejection hole formed therein and extending from the cavity to the top surface, and a suction hole formed therein for connecting the ejection hole and the top surface, and a gas supply unit for supplying gas into the cavity, wherein the ejection hole surrounds the suction hole in plan view, and when gas is supplied into the cavity, gas in the suction hole is discharged to the outside via the ejection hole.

Embodiments of methods and systems for wafer bonding alignment compensation are disclosed. The method comprises bonding a first pair of wafers including a first wafer and a second wafer, wherein the first pair of wafers have a plurality of corresponding bonding alignment mark pairs each including a first bonding alignment mark on the first wafer and a second bonding alignment mark on the second wafer; measuring alignment positions of the plurality of bonding alignment mark pairs; determining a mean run-out misalignment between the first pair of wafers using the alignment measurement, wherein the mean run-out misalignment indicates a deformation of at least one of the first pair of wafers; and during bonding of a second pair of wafers, controlling a wafer deformation adjustment module to compensate for the run-out misalignment based on the mean run-out misalignment of the first pair of wafers.