A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyolefin sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyolefin sheet, then picking up each device chip from the polyolefin sheet.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyester sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyester sheet, then picking up each device chip from the polyester sheet.

The present invention provides an imprint apparatus which forms a pattern of an imprint material on a substrate by using a mold, the apparatus comprising a control unit configured to control a process of deforming the mold into a convex shape and bringing the mold and the imprint material into contact with each other, wherein the control unit determines, based on information indicating a relationship between a relative tilt between the mold and the substrate, and a moment which fluctuates the relative tilt at a time of contact between the mold and the imprint material, a target relative tilt such that a moment generated at the time of contact between the mold and the imprint material falls within an allowable range, and starts contact between the mold and the imprint material after setting the relative tilt to the target relative tilt.

An imprint apparatus for forming a pattern in an imprint material on a substrate using an original as a mold, comprises an ultraviolet light generation device which irradiates with ultraviolet light which is curing light for curing the imprint material, and a control unit which controls a light amount of the ultraviolet light which is curing light. The control unit configured to perform a control of the light amount of the ultraviolet light acquires data of a defect distribution of the pattern formed on the substrate by the mold, and performs the control of the light amount of the ultraviolet light in a plurality of shot areas on the substrate based on the acquired data of the defect distribution.

A substrate bonding apparatus includes a lower chuck, an upper chuck, an electric actuator on a central portion of the upper chuck, a pressure sensor, and a controller. The lower chuck may support a lower substrate, the upper chuck may face the lower chuck such that a lower surface of the upper chuck faces the upper surface of the lower chuck, and the upper chuck may support an upper substrate. The electric actuator may lower a bonding pin through the upper chuck to apply a pressure to the upper substrate supported on the upper chuck. The pressure sensor may be below the lower substrate supported on the lower chuck. The pressure sensor may sense a lowering pressure applied by the bonding pin to the pressure sensor in real time. The controller may control the lowering pressure applied by the bonding pin.

Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.

An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device.

A stacking apparatus that stacks a first substrate and a second substrate includes: a plurality of holding members that hold the first substrate, wherein the plurality of holding members correct positional misalignment of the first substrate relative to the second substrate by preset amounts of correction, and the plurality of holding members include holding members having the amounts of correction that are different from each other. The stacking apparatus may further include a carrying unit that carries a holding member that is selected from among the plurality of holding members and holds the first substrate from a position where the holding member is housed to a position where the first substrate is held.

A method of splitting a semiconductor wafer includes: inducing a first stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a first radiation process; inducing a second stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a second radiation process, the second radiation process including applying laser energy to an edge of the semiconductor wafer; and splitting the semiconductor wafer after inducing the first stress distribution and the second stress distribution.

Various embodiments provide a substrate processing apparatus for grinding a substrate, and a display device including a substrate in which a hole is formed in an edge of the substrate using the substrate processing apparatus. The substrate processing apparatus for processing a display substrate includes a body which, in operation, rotates, a cylindrical grinding part connected to the body, and a lateral groove formed in a surface of the cylindrical grinding part. The lateral groove is configured to accommodate the display substrate. Thus, it is possible to form a hole by grinding an edge of the display substrate so as to be matched with a designed value.