A forming apparatus forming a composition on a substrate by using a mold, includes a supplier configured to supply a composition on the substrate, a plurality of processors including a first processor and a second processor, each of the plurality of processors being configured to bring the mold into contact with the composition supplied onto the substrate by the supplier, and a substrate conveyer configured to convey the substrate onto which the composition is supplied by the supplier to the first processor and then convey other substrate onto which the composition is supplied following the substrate to the second processor.

A method of processing a wafer having devices disposed in respective regions demarcated on a front face thereof by a grid of a plurality of projected dicing lines on the front face, the method includes a mask layer forming step of covering the front face of the wafer except for the regions where grooves are to be formed along the projected dicing lines with a resin material mixed with an ultraviolet ray absorber, and forming a mask layer on the front face of the wafer, a plasma etching step of performing plasma etching on the wafer from the mask layer side using a fluorine-based stable gas as an etching gas, and forming grooves in the wafer along the projected dicing lines, and a mask layer removing step of removing the mask layer after the plasma etching step is performed.

A laser processing apparatus includes: a chuck table that holds a packaged wafer by a holding surface; a laser processing unit that applies a laser beam to the packaged wafer to form a through-groove along each division line; an X-axis moving unit that moves the chuck table in an X-axis direction; and an examination unit. The chuck table includes: a holding member that forms the holding surface; and a light emitting body. The examination unit includes: a line sensor that extends in a Y-axis direction; and a control unit that determines the result of processing through reception by the line sensor of light from the light emitting body through the through-groove. The line sensor images the whole surface of the packaged wafer being held by the chuck table.

A positioning method includes an imaging step, a straight line storage step, a straight line registration step, and a positioning step. The imaging step captures an image of a region including a target or street on a workpiece. The straight line storage step detects and stores the coordinate positions of all predetermined straight lines in the region. The straight line registration step allows an operator to select a specific straight line in the target or on the street from all the straight lines and register the selected straight line. The positioning step positions a processing unit on the street in accordance with coordinate data concerning the straight line selected and registered in the straight line registration step.

A wafer to wafer bonding method includes performing a plasma process on a bonding surface of a first wafer, pressurizing the first wafer after performing the plasma process on the bonding surface of the first wafer, and bonding the first wafer to a second wafer. The plasma process has different plasma densities along a circumferential direction about a center of the first wafer. A middle portion of the first wafer protrudes after pressurizing the first wafer. The first wafer is bonded to the second wafer by gradually joining the first wafer to the second wafer from the middle portion of the first wafer to a peripheral region of the first wafer.

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of blowing out air to push up each device chip and picking up each device chip from the polyolefin sheet.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of blowing out air to push up each device chip and picking up each device chip from the polyester sheet.

A hubbed blade to be mounted on a spindle includes a circular hub and a circular blade fixed on a side of a first side of the hub. The blade has an opening formed through its center. The hub includes a protrusion portion protruding from the first side and having an outer peripheral edge of a shape corresponding to a shape of the opening. The hub and the blade are connected together via an adhesive with the hub and the blade being aligned each other with the protrusion portion inserted in the opening.

A hubbed blade to be mounted on a spindle includes a circular hub having an opening formed through a center thereof, and a circular blade fixed on a side of a first side of the hub. The hub has a first raised portion and a second raised portion. The first raised portion is circular, is disposed along an outer peripheral edge of the hub, and protrudes from the first side of the hub. The second raised portion is disposed so as to surround the opening on an inner side than the first raised portion in a radial direction of the hub, and protrudes from the first side of the hub. The hub and the blade are connected together via an adhesive applied to a plurality of regions on an end face of the second raised portion.

A technical concept of the present disclosure provides a method of producing a semiconductor package, the method including operations of: arranging a plurality of wafers on a tray, forming an interconnect structure on the tray and the plurality of wafers, and separating the plurality of wafers from the tray.