A chuck table holding a frame unit including a workpiece is securely placed in an opening of an annular frame by a tape. A transparent holder having a holding surface holds the workpiece with the tape interposed therebetween. A frame body is erected around and surrounding the holder, the frame body having a plurality of suction holes that are open in an inner circumferential surface of the frame body. The frame body has an inside diameter equal to or smaller than an inside diameter of the annular frame. While an opening of the frame body is being covered by the tape, a suction force is transmitted through the suction holes into the frame body, discharging air from between the tape and the holding surface to bring the tape into intimate contact with the holding surface thereby securing the workpiece of the frame unit to the holding surface.

A wafer processing method for dividing a wafer into individual device chips. The wafer processing method includes a thermocompression bonding sheet providing step of positioning the wafer in an inside opening of a ring frame and providing a thermocompression bonding sheet on a back side of the wafer and on a back side of the ring frame, a uniting step of heating the thermocompression bonding sheet as applying a pressure to the thermocompression bonding sheet to thereby unite the wafer and the ring frame through the thermocompression bonding sheet by thermocompression bonding, a dividing step of cutting the wafer to thereby form a plurality of dividing grooves and dividing the wafer into the individual device chips, a flattening step of flattening the thermocompression bonding sheet, and a back side observing step of observing the back side of each device chip through the thermocompression bonding sheet.

A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force F.sub.H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F.sub.H2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T.sub.H; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature T.sub.H is reduced at the second sample holder surface during the bonding.

A method includes dicing a wafer to form discrete components; transferring the discrete components onto a transparent carrier, including adhering the discrete component to a carrier release layer on the transparent carrier; and releasing one of the discrete components from the transparent carrier, the one of the discrete components being deposited onto a device substrate after the releasing.

A method of fabricating a semiconductor package using a laminating device is provided. The method includes placing a substrate on a substrate stand; providing a pressurizing unit which is expandable and includes a convex surface facing an upper surface of the substrate stand, on the substrate stand; injecting air into the pressurizing unit using a plate which is connected to the pressurizing unit; and supplying a film by a film supply unit which supplies the film between the substrate stand and the pressurizing unit, wherein the pressurizing unit attaches the film onto the substrate, while expanding.

An apparatus for wafer bonding includes a transfer module and a plasma module. The transfer module is configured to transfer a semiconductor wafer. The plasma module is configured to apply a first type of plasma to perform a reduction operation upon a surface of the semiconductor wafer at a temperature within a predetermined temperature range to convert metal oxides on the surface of the semiconductor wafer to metal, and apply a second type of plasma to perform a plasma operation upon the surface of the semiconductor wafer at a room temperature outside the predetermined temperature range to activate a surface of the semiconductor wafer.

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

A package structure and a method of manufacturing the same are provided. The package structure includes a die, an encapsulant, a RDL structure and a protection layer. The die includes a first surface and a second surface opposite to each other. The encapsulant is aside the die. The RDL structure is electrically connected to the die though a plurality of conductive bumps. The RDL structure is underlying the second surface of the die and the encapsulant. The protection layer is located over the first surface of the die and the encapsulant. The protection layer is used for controlling the warpage of the package structure.

A method of manufacturing a semiconductor device includes stacking a first substrate comprising a first surface having a semiconductor element and an opposing second surface and a second substrate comprising a third surface having a semiconductor element and an opposing fourth surface, forming a first contact hole extending from the second surface to the first surface of the first substrate and forming a first groove inwardly of a first region of the second surface of the first substrate by etching inwardly of the first substrate from the second surface thereof, forming a first patterned mask on the first substrate, so that the first groove is covered by the material of the first patterned mask, forming a first metal electrode in the first contact hole through an opening in the first mask as a mask, and removing the first mask and subsequently cutting through the first substrate in the first groove.

A vacuum system for film lamination, including a vacuum chamber module, a film-pressing module, a substrate susceptor module and a hot-plate heating module, is disclosed, wherein the film-pressing module includes a film-pressing platen, and the substrate susceptor module includes a substrate susceptor supported by a spring-loaded mechanism. During a film-lamination process, the film-pressing platen is actuated to move downwards to attach a laminating film onto a substrate, and the substrate susceptor is actuated to move downwards and finally rest on the hot-plate heating module. Therefore an adhesive glue disposed between the laminating film and the substrate can be thermally cured. After completing the film-lamination process, the film-pressing platen is actuated upwards so that the substrate susceptor also is actuated to move upwards to its initial position by a restoring force exerted by the spring-loaded mechanism. In such manner, the laminating film can be properly bonded to the substrate to avoid lamination defects such as air bubbles and to improve adhesion strength.