A non-contact processing device and a non-contact processing method are used to perform a processing procedure on a solid structure. The non-contact processing device of the invention uses an electromagnetic radiation source to provide energy to the solid structure to cause qualitative changes or defects in the solid structure, that is, to form a modified layer. A separation energy source is used to apply a separation energy on the solid structure with the modified layer in a non-contact manner. With stress, structural strength, lattice pattern or hardness of the modified layer being different from that of other non-processing areas, the solid structure can be rapidly separated or thinned at the modified layer.

Provided is a method for machining a workpiece including a substrate that has front and back surfaces and a ductile material layer that contains a ductile material and is disposed on the front or back surface. The method includes a tape bonding step of bonding a tape on a side of the substrate of the workpiece, a holding step of holding the workpiece by a holding table via the tape, and a cutting step of relatively moving the holding table and a cutting blade to cause the cutting blade to cut into the ductile material layer and the substrate. In the cutting step, the cutting blade is rotated such that a portion of the cutting blade, the portion being located on a forward side in a moving direction of the cutting blade relative to the holding table, cuts into the workpiece from the ductile material layer toward the substrate.

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyolefin sheet, pushing up each device chip through the polyolefin sheet, and picking up each device chip from the polyolefin sheet.

A processing apparatus includes a chuck table that holds a workpiece, a cutting unit that processes the workpiece held by the chuck table, a cassette placing region where a cassette is placed, a carrying unit that carries the workpiece between the cassette placed in the cassette placing region and the chuck table, and a surrounding wall that partitions a route for lifting the cassette upward and downward from an external space, in a space directly above the cassette placing region. A height of the surrounding wall is equal to or more than a height of a ceiling wall of the processing apparatus and is so as not to interfere with the cassette held by a carrier that travels.

A wafer supporting mechanism and a method for wafer dicing are provided. The wafer supporting mechanism includes a base portion and a support portion. The base portion includes a first gas channel and a first outlet connected to the first gas channel. The support portion is connected to the base portion and including a second gas channel connected to the first gas channel. An accommodation space is defined by the base portion and the support portion.

A planarization apparatus, including a chuck having a first surface and a second surface at two opposing sides thereof. The chuck includes a first zone extending along a periphery of the chuck, a second zone at an inner portion of the chuck, the second zone being surrounded by the first zone; and a flexure connecting the first zone with the second zone. The first zone includes a first member extending along the first surface from the flexure and a first ring land protruding from the first member adjacent to the flexure.

A holding table manufacturing method includes forming a plurality of first grooves in a front surface of a plate-shaped body, forming a plurality of second grooves in a back surface of the plate-shaped body, laying, on one another, a plurality of the plate-shaped bodies formed respectively with a plurality of the first grooves and a plurality of the second grooves and uniting the plate-shaped bodies together to form a suction plate, and accommodating the suction plate in an accommodating recess of a frame body to form a holding table. The first grooves and the second grooves do not reach side surfaces of the plate-shaped body, the first grooves and the second grooves communicate with each other, and the thickness of the suction plate is larger than the depth of the accommodating recess.

A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device, is configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the substrate, another substrate bonded before the substrate is bonded, or the substrate bonding device, and the two substrates are bonded to each other by a contact region expanding after the contact region is formed in a center.

A substrate processing apparatus includes a holder configured to hold a combined substrate in which a first substrate and a second substrate are bonded to each other; a first detector configured to detect an outer end portion of the first substrate; a second detector configured to detect a boundary between a bonding region where the first substrate and a second substrate are bonded and a non-bonding region located at an outside of the bonding region; a periphery removing device configured to remove a peripheral portion of the first substrate as a removing target from the combined substrate held by the holder.

A method of manufacturing a thinned wafer by separating a residual wafer from the thinned wafer, the method including: a weak layer forming step of forming a planar weak layer WL along one surface WFA of a semiconductor wafer WF to divide the semiconductor wafer WF into a thinned wafer WF1 and a residual wafer WF2 with the weak layer WL as a boundary; and a separating step of supporting at least one of a thinned wafer WF1 side and a residual wafer WF2 side of the semiconductor wafer WF and separating the thinned wafer WF1 and the residual wafer WF2 from each other, wherein the separation of the thinned wafer WF1 and the residual wafer WF2 gradually progresses from one end WFF in an outer edge of the semiconductor wafer WF toward the other end WFR in the outer edge of the semiconductor wafer WF.