An apparatus for manufacturing an element array includes a substrate hold means, a laser radiation device, and a collection mechanism. The substrate hold means holds a substrate including an adhesive layer on which elements are attached in a predetermined array while a surface of the adhesive layer is inclined relative to a horizontal surface at a predetermined angle. The laser radiation device radiates a laser to a specific element among the elements attached on the adhesive layer. The collection mechanism is disposed below the substrate and configured to receive the specific element falling by the laser radiation.

Embodiments of methods and systems for wafer bonding alignment compensation are disclosed. The method comprises bonding a first pair of wafers including a first wafer and a second wafer, wherein the first pair of wafers have a plurality of corresponding bonding alignment mark pairs each including a first bonding alignment mark on the first wafer and a second bonding alignment mark on the second wafer; measuring alignment positions of the plurality of bonding alignment mark pairs; determining a mean run-out misalignment between the first pair of wafers using the alignment measurement, wherein the mean run-out misalignment indicates a deformation of at least one of the first pair of wafers; and during bonding of a second pair of wafers, controlling a wafer deformation adjustment module to compensate for the run-out misalignment based on the mean run-out misalignment of the first pair of wafers.

A wafer measurement apparatus for measuring a bonding strength of a bonded wafer includes a wafer holder to hold a bonded wafer into which a blade is inserted and where a crack occurs, a lighting assembly including a light source, a light source controller to select the light source of the lighting assembly for detection of the crack reflected in the bonded wafer, on photographing conditions, a photographing assembly to photograph the bonded wafer by using the photographing conditions corresponding to a wavelength of the light source, on sensitivity of the wavelength of the light source, and a calculator to select one photographing condition, transmit the selected photographing condition, and calculate bonding strength, on a crack distance from a blade edge, extracted from an image of the bonded wafer, to a crack edge.

A workpiece holding method for a workpiece having a bowl-shaped warp includes a mounting step of mounting the workpiece on a holding unit having a holding surface, a suction hole opening to the holding surface, and a suction passage for making selective communication between the suction hole and a vacuum source for producing a suction force, the workpiece being mounted on the holding surface of the holding unit, a liquid supplying step of supplying a liquid to the workpiece held on the holding surface so that the liquid flows into a gap defined between the holding surface and the workpiece to fill the gap, and a suction step of bringing the suction hole into communication with the vacuum source to suck the liquid and the workpiece and thereby hold the workpiece through the liquid on the holding surface under suction, after performing the liquid supplying step.

A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

A substrate cleaning apparatus for performing scrub cleaning of a surface of a substrate by rotating both of the substrate and a roll cleaning member while keeping the roll cleaning member in contact with the surface. The apparatus includes a roll holder configured to support and rotate a roll cleaning member, a vertical movement mechanism, having a vertically movable unit vertically movable by actuating an actuator having a regulating device, configured to vertically move the roll holder coupled to the vertically movable unit so the roll cleaning member applies a roll load to the substrate W while cleaning the substrate. A load cell provided between the vertically movable unit of the vertical movement mechanism and the roll holder is configured to measure the roll load. A controller is configured to perform feedback control of the roll load through the regulating device based on a measured value of the load cell.

A method of manufacturing a semiconductor package that includes: disposing a semiconductor chip on a support board; sealing the semiconductor chips with a sealant to form a sealed body on the support board, thereby forming sealed semiconductor chips; and forming a rewiring layer and bumps on a side where the semiconductor chip is disposed, after the support board is removed from the sealed body The method also includes an individualizing step of cutting the sealed body along regions corresponding to division lines on the support board, to perform individualization in such a manner that the sealed semiconductor chips each have an upper surface and a lower surface larger than the upper surface, with a side wall inclined from the upper surface toward the lower surface; and a step of forming a conductive shield layer on the upper surfaces and the side walls of the plurality of sealed semiconductor chips.

A processing method of a wafer includes a cut groove forming step of carrying out cutting with a cutting blade along streets from the back surface of the wafer to form cut grooves, a wafer dividing step of irradiating the wafer with a laser beam along the cut grooves and dividing the wafer into individual chips after the cut groove forming step is carried out, and a die bonding layer disposing step of applying a liquid die bonding agent on the back surface of the wafer and curing it to form the chips on which die bonding layers are formed on the back surface. According to the processing method of the present invention, the occurrence of clogging in the cutting blade and generation of a burr or the like in the die bonding layers can be prevented.

Systems and methods for dicing a sample by a Bessel beam matrix are disclosed. The method for dicing a sample by a Bessel beam matrix may comprise generating a Bessel beam matrix including multiple Bessel beams arranged in a matrix form, according to a predetermined dicing layout of the sample; controlling a focus position of each Bessel beam in the generated Bessel beam matrix; and focusing simultaneously the Bessel beams of the Bessel beam matrix at the respective controlled focus positions within the sample for dicing.

In one instance, a method of manufacturing an integrated circuit includes a method for dicing a semiconductor wafer that includes disposing the semiconductor wafer on a moveable cutting table, cutting the semiconductor wafer, and ejecting a clearing fluid across an exposed side of the semiconductor wafer, with full coverage across the semiconductor wafer, at least during the cutting of the semiconductor wafer. The ejecting clearing fluid is ejected to form a layer or membrane of fluid that clears or reduces other fluids from the exposed side or surface of the semiconductor wafer. Other aspects are presented.