A method for adjusting inclination between wafers may include providing a first infrared light onto a first grid pattern in a first region in a first wafer and a second grid pattern in a second wafer, the first and second grid patterns overlapping, calculating a first distance in the first region between the first and second wafers based on a first Moir pattern from the overlapping first and second grid patterns, providing a second infrared light onto a third grid pattern in a second region in the first wafer and a fourth grid pattern in the second wafer, the third and fourth grid patterns overlapping, calculating a second distance in the second region between the first and second wafers based on a second Moir pattern from the overlapping third and fourth grid patterns, and adjusting relative inclination between the first and second wafers based on the first and second distances.

A method of manufacturing a semiconductor package includes: bonding a plurality of semiconductor chips to a plurality of mounting regions on a wiring board partitioned by crossing streets; supplying a liquid resin to a front surface side of the wiring board onto which the plurality of semiconductor chips have been bonded, to seal the plurality of semiconductor chips in a collective manner, thereby forming a sealed board; cutting the sealed board along the regions corresponding to the streets, to individualize the sealed chips in such a manner that the sealed chips each have an upper surface and a lower surface larger than the upper surface, with a side surface inclined from the upper surface toward the lower surface; and forming a conductive shield layer on the upper surfaces and the side surfaces of the plurality of sealed chips.

A laser processing apparatus for processing a plate-shaped workpiece by applying a laser beam to the workpiece, includes a cassette table for placing thereon a cassette in which a plurality of workpieces are accommodated, a carrying-out unit for carrying out the workpiece from the cassette placed on the cassette table, and a laser beam applying unit including a focusing unit for applying the laser beam to the workpiece held on the chuck table. The carrying-out unit carries out the workpiece having been processed by the laser beam applying unit from the chuck table, and accommodates the workpiece into the cassette placed on the cassette table.

A cutting apparatus is provided. The cutting apparatus includes a processing chamber, a chuck table, a transferring mechanism, and a cleaning member. The chuck table is disposed in the processing chamber and configured to hold a workpiece on a chuck surface of the chuck table. The transferring mechanism is configured to transfer the workpiece to the chuck surface or transfer the workpiece away from the chuck surface. The cleaning member, which is disposed in the processing chamber, is configured to move across and clean the chuck surface before the workpiece is transferred to the chuck table and/or after the workpiece is transferred away from the chuck table.

A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.

A method for dicing a wafer includes scribing perforations in a wafer. The wafer has a monocrystalline structure and the perforations have a polycrystalline structures The method also includes adhering the wafer to a top surface of a dicing tape and applying a downward force on a periphery of the dicing tape. The downward force causes a bottom surface of the dicing tape to deform around a contour of a dome shaped chuck, breaking the perforations in the wafer.

A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.

A method for aligning and contacting a first substrate with a second substrate using a plurality of detection units, and a corresponding device for alignment and contact.

A laser oscillator of a laser processing apparatus generates burst pulses each composed of a plurality of sub-pulses. The plurality of sub-pulses are generated in such a manner that the energy of the sub-pulse sequentially changes from a lower energy to a higher energy, and the burst pulses are applied to a wafer, whereby the wafer is formed therein with shield tunnels extending from the front surface to the back surface of the wafer and each being composed of a minute hole and an amorphous phase surrounding the minute hole.

Disclosed herein is a wafer processing method including a protective film forming step of forming a protective film with which the whole of a surface of a wafer is coated, a laser beam irradiation step of irradiating the wafer with a laser beam along streets to remove a functional layer and expose a substrate, a protective film detecting step of detecting the coating state of the protective film in plural device regions over the wafer after the laser beam irradiation, a protective film re-forming step of forming the protective film again in such a manner that the protective film covers each device region if a part that is not coated with the protective film exists in the device regions, a plasma irradiation step of carrying out plasma irradiation for the wafer, and a dividing step of dividing the wafer by cutting along the streets.