A chuck for a laser beam wafer dicing equipment includes a wafer support plate having an upper surface for holding a wafer disposed on a dicing tape. The upper surface includes a topographically structured surface region that partly or completely overlaps an edge of the wafer when the wafer disposed on the dicing tape is placed on the upper surface. The topographically structured surface region provides for a reduction in an area of contact between the upper surface and the dicing tape.

A chuck for a laser beam wafer dicing equipment includes a wafer support plate having an upper surface for holding a wafer disposed on a dicing tape. The upper surface includes an annular groove that overlaps an edge of the wafer when the wafer disposed on the dicing tape is placed on the upper surface. The wafer support plate includes a ventilation channel configured to ventilate the annular groove.

A method for bonding a first substrate and a second substrate comprises bringing the first and second substrates into contact and implementing heating of a peripheral zone of at least one of the first and second substrates. The heating is initiated before the substrates are brought into contact and continued at least until the substrates are brought into contact in the zone. The heating is implemented by an infrared lamp configured to emit radiation having an outer boundary corresponding to the edge of the substrates.

Cleave systems for cleaving a semiconductor structure are disclosed. The cleave systems may include a cleave arm that is moveable from a starting position to a raised position in which a cleave stress is applied to the semiconductor structure. Spring members store energy as the cleave arm is raised with the stored spring energy causing the structure to cleave into two pieces upon initiation of the cleave across the structure.

A bonding device measures a position deviation amount of the chip with respect to the substrate in a state where the chip and the substrate are in contact, and corrects and moves the chip relatively to the substrate in such a way as to reduce the position deviation amount, based on the measured position deviation amount. Then, the bonding device fixes the chip to the substrate by irradiating a resin portion of the chip with an ultraviolet ray and curing the resin portion when the position deviation amount of the chip with respect to the substrate is equal to or less than a position deviation amount threshold value.

A laser light irradiation device includes: a laser light source; a spatial light modulator including a display unit configured to display a phase pattern; an objective lens configured to condense a laser light emitted from the spatial light modulator at the object; an image-transfer optical system configured to transfer an image of the laser light on the display unit to an entrance pupil plane of the objective lens; a reflected light detector configured to detect reflected light of the laser light which is incident in the object and reflected by an opposite surface opposite to a laser light entrance surface; and a controller configured to control the phase pattern. When the reflected light detector detects the reflected light, the controller displays a reflected light aberration correction pattern which is the phase pattern correcting aberration generated in the event of the laser light being transmitted through the object having twice the predetermined thickness.

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

A method for aligning and contacting a first substrate with a second substrate using a plurality of detection units and a corresponding device for alignment and contact.

A wafer dividing method of dividing a wafer along each of a plurality of projected dicing lines set in a grid pattern on a front surface of the wafer includes forming a division initiating point serving as an initiating point of division of the wafer along each of the dicing lines, adhering a protective film made of an olefin-based resin and having one surface with no adhesive used therein to the wafer in such a manner that the one surface is brought into intimate contact with the front surface of the wafer, supporting the wafer by a support table in such a manner that the front surface of the wafer and the support table face each other, and applying an external force to the wafer from a back surface side of the wafer to thereby divide the wafer at the division initiating points.

A system includes a wafer shape metrology sub-system configured to perform one or more shape measurements on post-bonding pairs of wafers. The system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller receives a set of measured distortion patterns. The controller applies a bonder control model to the measured distortion patterns to determine a set of overlay distortion signatures. The bonder control model is made up of a set of orthogonal wafer signatures that represent the achievable adjustments. The controller determines whether the set of overlay distortion signatures associated with the measured distortion patterns are outside tolerance limits provides one or more feedback adjustments to the bonder tool.