A sheet pasting device EA includes: a sheet feed unit 10 that feeds an adhesive sheet AS; and a press unit 20 that has a press roller 22 for pressing the adhesive sheet AS against a work WK and that pastes the adhesive sheet AS on the work WK by pressing the adhesive sheet AS against the work WK moving relative to the press roller 22, the press unit 20 bringing the press roller 22 into contact with an attachment surface WK1 of the work WK and rotating the press roller 22 on the attachment surface WK1, at a stage before pressing the adhesive sheet AS against the work WK using the press roller 22.

A wafer processing apparatus including a supporting unit having a frame fixing section fixing the frame, and a wafer table having a front side and a rear side, the front side including a supporting face supporting the wafer and a transparent plate, a liquid layer forming unit including a nozzle section and forming a layer of a liquid on the supporting face of the wafer table, an imaging unit including an imaging camera positioned adjacent to the rear side of the wafer table and opposite to the supporting face on the front side of the wafer table and an air blowing nozzle blowing air to a region between the wafer table and the adhesive sheet.

A substrate processing apparatus includes a table, a pad holder, an elevating mechanism, and at least three centering mechanisms. The table is for supporting a substrate. The pad holder is for holding a polishing pad for polishing the substrate supported by the table. The elevating mechanism is for elevating the pad holder with respect to the substrate. The at least three centering mechanisms are for pushing the substrate supported by the table in a center direction of the table to position the substrate. The at least three centering mechanisms each include a rotation shaft arranged in a peripheral area of the table and a centering member mounted to the rotation shaft.

A processing apparatus includes a wafer table that supports a wafer, a frame table that supports an annular frame, a first tape pressure bonding unit that includes a first pressure bonding roller for executing pressure bonding of a tape to the annular frame, and a second tape pressure bonding unit that includes a second pressure bonding roller for executing pressure bonding of the tape of the tape-attached annular frame to a front surface or a back surface of the wafer. A first heating unit is disposed in one of or both the frame table and the first pressure bonding roller, while a second heating unit is disposed in one of or both the wafer table and the second pressure bonding roller.

A processing apparatus includes a chuck configured to hold a substrate; a moving unit to which a processing tool configured to process the substrate is mounted; a sprinkler configured to spray a cleaning liquid configured to clean the moving unit from an outside of the moving unit; and a housing accommodating the chuck, the processing tool, and the sprinkler therein. The sprinkler includes a fixed unit fixed to an inside of the housing, and a rotating unit rotatably supported at the fixed unit. The rotating unit includes a nozzle configured to discharge the cleaning liquid, and a rotation block configured to hold the nozzle.

A processing method of processing a substrate in a processing apparatus includes performing a first grinding processing on the substrate in a first grinder; performing a second grinding processing on the substrate in a second grinder; performing a first re-grinding processing on the substrate in the first grinder; and performing a second re-grinding processing on the substrate in the second grinder. The substrate is ground to a final thickness in the second re-grinding processing.

Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes loading a first wafer and a second wafer onto a bonding platform such that the second wafer overlies the first wafer. An alignment process is performed to align the second wafer over the first wafer by virtue of a plurality of wafer pins, where a plurality of first parameters are associated with the wafer pins during the alignment process. The second wafer is bonded to the first wafer. An overlay (OVL) measurement process is performed on the first wafer and the second wafer by virtue of the plurality of wafer pins, where a plurality of second parameters are associated with the wafer pins during the alignment process. An OVL shift is determined between the first wafer and the second wafer based on a comparison between the first parameters associated with the wafer pins during the alignment process and the second parameters associated with the wafer pins during the OVL measurement process.

A method of forming a semiconductor device includes loading a first wafer and a second wafer into a wafer bonding system. A relative humidity within the wafer bonding system is measured a first time. After measuring the relative humidity, the relative humidity within the wafer bonding system may be adjusted to be within a desired range. When the relative humidity is within the desired range, the first wafer is bonded to the second wafer.

In an embodiment, a wafer bonding system includes a chamber, a gas inlet and a gas outlet configured to control a pressure of the chamber to be in a range from 1×10.sup.−2 mbar to 1520 torr, a first wafer chuck having a first surface to support a first wafer, and a second wafer chuck having a second surface to support a second wafer, the second surface being opposite the first surface, the second wafer chuck and the first wafer chuck being movable relative to each other, wherein the second surface that supports the second wafer is divided into zones, wherein a vacuum pressure of each zone is controlled independently of other zones.

A dividing method of a substrate includes a close contact step of bringing an expanding tape into close contact with a substrate after execution of a modified layer forming step and before execution of a chip interval expansion step. Therefore, when the expanding tape is expanded in the chip interval expansion step, it is possible to favorably form plural chips with use of modified layers as the origin and to favorably widen the interval between the plural chips.