A semiconductor device is located between a first die-set part and a second die-set part of a press, and the first and second die-set parts are moved relative to each other for punching and shaping the semiconductor device therebetween. At least one parameter is monitored with at least one sensor attached to the first die-set part and/or the second die-set part at different positions of the first die-set part when it is moving relative to the second die-set part. Variations of the at least one parameter at different relative positions of the first and second die-set parts are compared, and a failure is determined to have occurred when the present variation of the parameter is different from its expected variation during normal operation of the press when there is no failure.

An inspection device includes: a laser irradiation unit; an imaging unit; and a control unit. The control unit is configured to execute a processing process of controlling the laser irradiation unit according to a recipe set such that a plurality of modified regions are formed inside a wafer by irradiating the wafer with a laser beam and a full-cut state where cracks extending from the modified regions have reached a back surface and a surface is attained; an identification process of identifying a state of the crack on the back surface extending from the modified region, and a state of at least one of the modified regions and the cracks inside the wafer, based on a signal; and a determination process of determining whether or not a dicing force applied to the wafer according to the recipe is proper, based on information identified in the identification process.

Provided is a laser processing device for forming a modified region by irradiating an object with laser light. The device includes a support portion configured to support the object, a laser irradiation unit configured to irradiate the object supported by the support portion with the laser light, a moving mechanism that moves at least one of the support portion and the laser irradiation unit such that a converging point of the laser light relatively moves with respect to the object, and a control unit that controls the laser irradiation unit and the moving mechanism. A first line extending along a first direction and a second line extending along a second direction intersecting the first direction and extending beyond the first line when viewed from a direction intersecting an incident surface of the laser light are set in the object.

The present invention provides an ASC process automation device including: a loading part into which an ingot having been subjected to a wire sawing is input; a kerosene cleaning part for cleaning the ingot with kerosene; a precleaning part for precleaning the ingot; a main cleaning part for cleaning the ingot multiple times; a wafer peeling part for peeling the ingot to produce multiple wafers; and a transport unit for moving the ingot linearly and upward/downward while proceeding to the kerosene cleaning part, the precleaning part, the main cleaning part, and the wafer peeling part.

A superstrate for planarizing a substrate. The superstrate includes a body having a first side having a contact surface and a second side having a central portion and a peripheral portion surrounding the central portion. The peripheral portion includes a recessed region.

A micro-transfer printing system comprises a source substrate having a substrate surface and components disposed in an array on, over, or in the substrate surface Each component has a component extent in a plane parallel to the substrate surface. A stamp comprises a stamp body and stamp posts extending away from the stamp body disposed in an array over the stamp body. Each of the stamp posts has (i) a post location corresponding to a component location of one of the components when the stamp is disposed in alignment with the source substrate, and (ii) a post surface extent on a distal end of the stamp post. The post surface extent is greater than the component extent.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

A recognition method of a kerf includes a bonding step of bonding a workpiece to a dicing tape greater in size than the workpiece, a pre-machining imaging step of imaging an optimal region of the dicing tape where the workpiece is not bonded, a kerf forming step of forming a kerf in the optimal region by a cutting machine, a post-machining imaging step of imaging the optimal region with the kerf formed therein, and a recognition step of comparing intensities of light received at each two corresponding pixels in respective images of the optimal region as acquired by the pre-machining imaging step and the post-machining imaging step, subtracting the each two pixels where intensities of received light are the same, and recognizing as the kerf a region formed by the remaining pixels.

In some embodiments, the present disclosure relates to a method that includes aligned a first wafer with a second wafer. The second wafer is spaced apart from the first wafer. The first wafer is arranged on a first electrostatic chuck (ESC). The first ESC has electrostatic contacts that are configured to attract the first wafer to the first ESC. Further, the second wafer is brought toward the first wafer to directly contact the first wafer at an inter-wafer interface. The inter-wafer interface is localized to a center of the first wafer. The second wafer is deformed to gradually expand the inter-wafer interface from the center of the first wafer toward an edge of the first wafer. The electrostatic contacts of the first ESC are turned OFF such that the first and second wafers are bonded to one another by the inter-wafer interface.

The present disclosure relates to plasma dicing of wafer. More specifically, the present disclosure is directed to frame masks and methods for plasma dicing wafers utilizing frame masks. The frame mask includes a mask frame, wherein the mask frame includes a top ring mask support and a side ring mask support. A plurality of mask segments suspended from the top ring mask support by segment supports, the mask segments are configured to define dicing channels on a blank wafer. The frame mask is configured to removably sit onto a frame lift assembly in a plasma chamber of a plasma dicing tool, when fitted onto the frame lift assembly, the mask segments are disposed above a wafer on a wafer ring frame for plasma dicing. The mask frame is configured to enable flow of plasma therethrough to the wafer to etch the wafer to form dicing channels defined by the mask segments.