There is provided a processing method of a workpiece by which the workpiece is processed. The processing method includes a thermocompression bonding step of executing thermocompression bonding of a first sheet composed of a thermoplastic resin to a front surface side of the workpiece by disposing the first sheet on the front surface side of the workpiece and heating the first sheet, a processing step of processing the workpiece together with the first sheet, and a separation step of separating the first sheet from the workpiece by moving a second sheet composed of a thermoplastic resin after executing thermocompression bonding of the second sheet to the first sheet by disposing the second sheet on the first sheet processed and heating the second sheet.

A wafer processing system includes a laser processing apparatus, a grinding apparatus, a tape sticking apparatus, a first cassette placement part, a second cassette placement part, a conveying unit that conveys a wafer, and a controller that controls the respective constituent elements. The controller includes a first processing program instructing section that conveys a wafer unloaded from a first cassette in order of the laser processing apparatus, the grinding apparatus, the tape sticking apparatus, and a second cassette and sequentially carries out processing by each apparatus for the one wafer, and a second processing program instructing section that conveys the wafer unloaded from the first cassette in order of the grinding apparatus, the laser processing apparatus, the tape sticking apparatus, and the second cassette and sequentially carries out processing by each apparatus for the one wafer.

Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

An apparatus includes a first substrate chuck configured to hold a first substrate, a second substrate chuck configured to hold a second substrate, and a dispenser configured to dispense a formable material onto the first substrate while the first substrate overlies the first substrate chuck and to dispensing the formable material onto the second substrate while the second substrate overlies the second substrate chuck. A method of forming a planarization layer on a substrate can use the apparatus. A method of making an article can include the method of forming the planarization layer.

An arrangement includes a panel configured as a pre-form for manufacturing a plurality of component carriers; a protection layer covering a surface portion of a main surface of the panel, wherein the protection layer is detachable from the surface portion without leaving residues on the panel. A handling tool for handling the panel includes a surface onto which the panel is arrangeable. The panel includes a handling surface, with which the panel is arrangeable onto the handling tool, wherein the handling surface comprises at least part of the surface portion covered by the protection layer.

A workpiece cutting method of cutting a workpiece along a plurality of crossing division lines formed on a front side of the workpiece, by using a cutting blade having a thickness gradually decreasing toward an outer circumference of the cutting blade. The workpiece cutting method includes a shape checking step of checking a shape of the cutting blade; a cut depth setting step of setting a cut depth by the cutting blade into the workpiece according to the shape checked in the shape checking step such that a width of a cut groove to be formed on the front side of the workpiece becomes a previously set value; and a cutting step of cutting the workpiece with the cut depth set in the cut depth setting step, by forcing the cutting blade into the workpiece from the front side thereof.

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

A substrate holder for mounting a substrate, comprising fixing elements for fixing the substrate, wherein the fixing elements can be grouped into zones, and a corresponding method.

A method of singulating a wafer includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. The wafer has first and second opposing major surfaces and a layer of material disposed along the second major surface. The method includes placing the wafer onto a carrier substrate and etching through the spaces to form singulation lines, wherein etching comprises stopping atop the layer of material. The method includes providing an apparatus comprising a compression structure, a support structure, and a transducer system configured to apply high frequency mechanical vibrations to the layer of material. The method includes placing the wafer and the carrier substrate onto the support structure, and, in one embodiment, applying pressure and mechanical vibrations to the wafer to separate the layer of material in the singulation lines.

An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.