Disclosed herein are a non-rigid pad for device transfer, which allows uniform contact pressure to be applied between multiple devices and a target substrate to which the devices are to be transferred, a method of manufacturing the same, and a non-rigid pad group for device transfer including the same. The non-rigid pad includes: a base plate; and multiple pillars each protruding from one surface of the base plate with one end thereof connected to the one surface of the base plate, the pillars being bent and deformed upon application of external force, wherein the non-rigid pad is disposed between a transfer film to which multiple devices to be transferred to a target substrate are adhesively attached and a pressing unit providing pressing force to transfer the multiple devices to the target substrate, the non-rigid pad being bent and deformed upon application of pressing force by the pressing unit to allow uniform contact pressure to be applied between the multiple devices and the target substrate.

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

A stage for cutting a substrate includes: a body member; a plurality of first discharging members, each including a first suction portion in the body member and a first partition wall portion connected to the first suction portion and protruding from a top surface of the body member, each of the first discharging members defining a first space connected to an outside; a plurality of second discharging members, each including a second suction portion in the body member and a second partition wall portion connected to the second suction portion and protruding from the top surface of the body member, each of the second discharging members defining a second space connected to the outside; a plurality of connecting pipes each connected to the first partition wall portion and the second partition wall portion; and a plurality of supply pipes connected to the connecting pipes.

A substrate processing apparatus includes the following: a support frame, first stage, a suction part, and a plurality of island-type second stages. The support frame is disposed on the first stage. The height of the support frame is lower than the height of the first stage. A plurality of island-type second stages are disposed on the support frame on the same plane as the first stage. The suction part is disposed on the support frame.

Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

A holding mechanism includes a wafer holding section that holds a wafer under suction, and a frame support section that is disposed on the outer circumference of the wafer holding section and that supports a frame. The frame support section includes a permanent magnet.

A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.

A laser processing machine includes a condenser and a water pillar forming unit. The condenser condenses a laser beam emitted from a laser oscillator and irradiates it to a workpiece held on a chuck table. The water pillar forming unit is disposed on a lower end of the condenser and is configured to form a thread-shaped water pillar on a front side of the workpiece. The laser oscillator includes a first laser oscillator, which emits a first laser beam having a short pulse width, and a second laser oscillator, which emits a second laser beam having a long pulse width. After the laser beams emitted from the first and second laser oscillators have transmitted through the thread-shaped water pillar formed by the water pillar forming unit and have been irradiated to the workpiece, a plasma occurred in the water pillar forming unit applies processing to the workpiece.

A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a low-viscosity resin applying step of coating the face side of the wafer with a first liquid resin of low viscosity to cover an area of the wafer where the plurality of devices are present, a high-viscosity resin applying step of, after the low-viscosity resin applying step, coating the face side of the wafer with a second liquid resin of higher viscosity than the first liquid resin in overlapping relation to the first liquid resin, a resin curing step of curing the first liquid resin and the second liquid resin that have coated the face side of the wafer into a protective film, and a planarizing step of planarizing the protective film.

A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a resin applying step of coating the face side of the wafer with a liquid resin to cover an area of the wafer where the plurality of devices are present, a resin curing step of curing the liquid resin into a protective film, a protective tape laying step of laying a protective tape on an upper surface of the protective film, and a planarizing step of planarizing a face side of the protective tape.