Method for processing a semiconductor-wafer having a front surface, back surface, and chamfered-portion composed of a chamfered surface on the front surface side, a chamfered surface on the back surface side, and an end face at a peripheral end, including: mirror-polishing of each portion of the chamfered surface on the front surface side, the chamfered surface on the back surface side, the end face, and an outermost peripheral-portion on the front or back surface adjacent to the chamfered surface; wherein the end face mirror-polishing and mirror-polishing of the outermost peripheral-portion on the front or back surface are performed in one step, after step of mirror-polishing the chamfered surface on the front surface side and step of mirror-polishing the chamfered surface on the back surface side; roll-off amount of the outermost peripheral-portion on the front or back surface is adjusted by one step-performed mirror-polishing of the end face and outermost peripheral-portion.

A method for manufacturing a display device includes preparing a display device including a display panel including a first alignment mark and a first circuit board including a second alignment mark and on one end of the display panel, disposing the display device on a stage including a base mark, setting the base mark as a reference mark in consideration of a relative position relation between the first alignment mark and the base mark by sensing the first alignment mark and the base mark, and determining a bending state of the display device by sensing the base mark and the second alignment mark and identifying a position relation between the base mark and the second alignment mark.

There is provided a wafer processing method for dividing a wafer having a plurality of devices formed in regions partitioned by a plurality of crossing division lines on a front surface of a substrate having a birefringent crystal structure, into individual device chips. The wafer processing method includes a detection step of detecting the division line formed on the front surface of the wafer by an imaging unit from the back side of the wafer. In the detection step, a polarizer disposed on an optical axis connecting an imaging element and an image forming lens provided in the imaging unit intercepts extraordinary light appearing due to birefringence in the substrate and guides ordinary light to the imaging element.

A SiC wafer is processed by a laser beam having a wavelength that transmits SiC to form a peeling plane in a region of the wafer which corresponds to a device area of a first surface of the wafer. A plurality of devices demarcated by a plurality of intersecting projected dicing lines in the device area are formed on the first surface. An annular groove is formed on a second surface of the wafer which is opposite the first surface, in a boundary region of the wafer between the device area and an outer peripheral excessive area surrounding the device area. A portion of the wafer which is positioned radially inwardly of the annular groove is peeled from the peeling plane, thereby thinning the device area and forming an annular stiffener area on a region of the second surface which corresponds to the outer peripheral excessive area.

A processing apparatus including a chuck table for holding a workpiece, a processing unit for processing the workpiece held on the chuck table, and a feeding mechanism for relatively moving the chuck table and the processing unit in an X direction as a feeding direction. The processing apparatus further includes a three-dimensional imaging mechanism for imaging the workpiece held on the chuck table in three dimensions composed of the X direction, a Y direction perpendicular to the X direction, and a Z direction perpendicular to both the X direction and the Y direction and then outputting an image signal obtained above, a control unit for generating a three-dimensional image according to the image signal output from the three-dimensional imaging mechanism, and an output unit for outputting the three-dimensional image generated by the control unit.

A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield edge segments. The outer structure defines an interior annular edge configured to correspond to the circumferential edge of the wafer. Each one of the plurality of plasma shield edge segments is defined by an inner edge and side edges. The inner edge is interior to and concentric to the annular edge of the outer structure. The side edges extend between the inner edge and the annular edge.

A processing apparatus includes a chuck table for holding a workpiece thereon, a processing unit for processing the workpiece held on the chuck table, a touch panel for entering processing conditions, and a control unit for controlling the touch panel. The control unit controls the touch panel to display a plurality of input fields corresponding to a plurality of items included in the processing conditions, and controls the touch panel to display a copy processing key and a paste processing key when one of the input fields is selected. The control unit copies information entered in the selected one of the input fields when the copy processing key is selected, and enters information that has been copied in advance into the selected one of the input fields when the paste processing key is selected.

A wafer dividing apparatus for dividing a wafer stuck to an adhesive tape and supported at an opening of a frame into individual chips along a scheduled division line is provided. The wafer dividing apparatus includes a cassette table movable upwardly and downwardly in a Z axis direction, a first carry-out/in unit that carries out the frame from the cassette placed on the cassette table or carry in the frame to the cassette, a first temporary receiving unit including a pair of first guide rails extending in the X axis direction and a guide rail opening/closing portion that increases the distance between the pair of first guide rails, a reversing unit including a holding portion that holds the frame and rotates by 180 degrees to reverse the front and back of the frame, and a transport unit that moves the reversed frame.

A wafer is bonded to a support plate by cutting off, with a cutting blade, an annular portion of the bonded wafer which extends from the outer peripheral edge of the bonded wafer to a position that is spaced radially inwardly toward the center of the bonded wafer by a predetermined distance. Bonding is done by a method that includes a captured image forming step of irradiating the outer peripheral edge of the bonded wafer with light emitted from an irradiating unit and passing through a through hole, and imaging the outer peripheral edge of the bonded wafer with an imaging camera disposed in facing relation to the irradiating unit with the bonded wafer interposed therebetween, thereby to capture an image, and an outer peripheral edge position detecting step of detecting an outer peripheral edge position of the bonded wafer on the basis of the captured image.

Disclosed herein is a method of manufacturing a packaged wafer including a step of forming grooves in a face side of a wafer along projected dicing lines to a depth than a finished thickness of the wafer, a step of forming a ring-shaped groove in and along a boundary between a device area and an outer peripheral excess area of the wafer to a depth larger than the depth of the grooves, and a step of placing a recess mold of a molding apparatus in engagement with the wafer so that a side wall of the recess mold is placed on a bottom of the ring-shaped groove and filling a space between the recess mold and the wafer with a molding resin.