Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a rotating laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.

In one embodiment, die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a mechanical device to apply localized pressure to the wafer to separate the back layer in the singulation lines. The localized pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer. A support structure is used to heat and/or cool at least the first carrier-substrate while the localized pressure is applied.

A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force F.sub.H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F.sub.H2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T.sub.H; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature T.sub.H is reduced at the second sample holder surface during the bonding.

A cutting apparatus includes a width measuring unit for measuring the width of a grooving groove formed in a wafer by laser grooving and the width of a cut groove formed by a cutting blade. The width measuring unit includes an imaging camera for imaging the grooving groove and the cut groove, and an illuminating unit for illuminating an area to be imaged by the imaging camera with light supplied in a predetermined light quantity. Therefore, when first light is radiated from the illuminating unit, a first image in which the grooving groove is sharply imaged can be imaged by the imaging camera, whereas when second light is radiated from the illuminating unit, a second image in which the cut groove is clearly imaged can be imaged by the imaging camera. Consequently, the grooving groove and the cut groove can be easily distinguished from each other.

A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

A substrate suctioning device includes a table having a suction surface suctioning a substrate, and a plurality of suction units provided on the suction surface of the table. The substrate suctioning device includes a control unit that, with setting a group of suction unit(s) among the plurality of suction units as a starting point, sequentially decompresses a plurality of remaining suction units disposed in a direction away from the group of suction unit(s) as the starting point, along the direction away from the group of suction unit(s) as the starting point.

A height position of a surface of a wafer can be detected accurately and stably without being affected by variation in a thin film formed on the surface of the wafer. An AF (autofocus) device irradiates the surface of the wafer W with an AF laser beam, detects reflection light thereof for each wavelength with a detection optical system. An AF signal processing unit outputs a displacement signal indicating displacement of the surface of the wafer to a control unit on the basis of a detection result of the detection optical system. Moreover, the AF device includes a focus optical system disposed in an irradiation optical path which is an optical path from the light source unit to a light converging lens. The focus optical system adjusts a light converging point of the AF laser beam in a wafer thickness direction.

A method for suppressing material warpage by means of a pressure difference comprises the following steps: a. preparing a plurality of carrier boards; b. preparing a plurality of carrier board pressing devices having an upper surface and a lower surface on which at least one air bag is provided; c. adjusting the processing chamber to be a working temperature and a working pressure, so that the carrier boards and the carrier board pressing devices placed therein are surrounded by the working temperature and the working pressure; d. effectively suppressing warpage of the carrier board by using a pressure difference between a first predetermined pressure in the air bag and the working pressure of the processing chamber. Thereby, production quality of carrier board is significantly improved, as well as the cost for production of which is effectively reduced.

A substrate processing system comprising a polishing part, a pre-cleaning region, and a cleaning part. The polishing part performs a Chemical Mechanical Polishing (CMP) process on a substrate. The pre-cleaning region is prepared in the polishing part and allows pre-cleaning performed on the substrate having undergone the polishing process. The cleaning part cleans the substrate pre-cleaned in the pre-cleaning region.