A processing apparatus includes a chuck table, a first and second image capturing units, a display device, and a controller. The first image capturing unit obtains a first image group of images captured of a processed groove in the workpiece at different positions along a thicknesswise direction, each including a piece of first image information representing a shape of the processed groove. The second image capturing unit obtains a second image group of images captured of the processed groove at different positions along the thicknesswise direction of the workpiece, each including a piece of second image information representing a shape of the processed groove. The controller orders the pieces of at least either the first or the second image information into a sequence along the thicknesswise direction, thereby generating a three-dimensional image of the processed groove, and displays the three-dimensional image on the display device.

A semiconductor die forming method includes preparing a wafer, forming a low-k dielectric layer on the wafer, forming a metal pad on the low-k dielectric layer, forming a passivation layer on the metal pad, patterning the passivation layer, laser grooving the low-k dielectric layer using an ultrashort pulse laser, and cutting the wafer by mechanical sawing to form one or more semiconductor dies.

A substrate stacking apparatus that stacks first and second substrates on each other, by forming a contact region where the first substrate held by a first holding section and the second substrate held by a second holding section contact each other, at one portion of the first and second substrates, and expanding the contact region from the one portion by releasing holding of the first substrate by the first holding section, wherein an amount of deformation occurring in a plurality of directions at least in the first substrate differs when the contact region expands, and the substrate stacking apparatus includes a restricting section that restricts misalignment between the first and second substrates caused by a difference in the amount of deformation. In the substrate stacking apparatus above, the restricting section may restrict the misalignment such that an amount of the misalignment is less than or equal to a prescribed value.

A method and a device for aligning two lenses, wherein the method is directed to aligning first and second optical partial systems of an optical system, which are arranged so as to be located opposite to one another. The method includes the steps of: projecting alignment marks into a first image plane of the first optical partial system, projecting the alignment marks from the first image plane onto a sensitive surface of the second optical partial system, and aligning the optical partial systems relative to one another, such that projections of the alignment marks in a depth of field of the sensitive surface are imaged at ideal positions.

An anti-ejection apparatus for wafer units includes a lock bar and a guide pin. The lock bar alternately has a plurality of lock portions and a plurality of unlock portions. The lock portions are located at heights corresponding to those of insertion slots of a side plate of a cassette, and enable blocking of the insertion slots. The unlock portions enable unblocking of the insertion slots. The guide pin is connected to the lock bar and is disposed protruding downward from a bottom portion of the side plate of the cassette. When the guide pin is pressed upward at its lower end portion, the unlock portions and the insertion slots are communicated with each other. When the pressing of the lower end portion of the guide pin is cancelled, on the other hand, the insertion slots are blocked by lock portions.

An apparatus for supporting a process of debonding a carrier glass sheet and an ultrathin glass sheet. A suction plate includes a plurality of suction hole portions defining suction holes for suction-holding a glass laminate seated thereon and at least one recess portion defining at least one recess accommodating at least one device layer protruding from one surface of an ultrathin glass sheet of the glass laminate. A plurality of suction cups are fitted to the plurality of suction hole portions, respectively, such that the plurality of suction cups are elastically compressible, in response to contact pressure of the ultrathin glass sheet and the device layer. A vacuum pump is connected to the plurality of suction hole portions to apply negative pressure to the plurality of suction hole portions. A controller controls the vacuum pump to adjust the negative pressure applied to the plurality of suction hole portions.

A laser processing method includes a laser light emitting step of emitting a pulsed laser light along a line from a back surface of a target having a functional element layer on side of a front surface. The laser light emitting step includes: a first step of irradiating the functional element layer with a first pulsed laser light along the line, to form a weakened region in the functional element layer along the line; and a second step of emitting a second pulsed laser light into the target to follow the first pulsed laser light along the line, to form a crack reaching the front surface along the line in the target. The first pulsed laser light has a pulse width that is shorter than a pulse width of the second pulsed laser light.

A method of processing a wafer having a first surface and a second surface opposite the first surface is provided. The method includes the steps of: holding the second surface of the wafer such that the first surface thereof is exposed; processing an exposed first surface side of an outer circumferential edge portion of the wafer with a processing tool including a grinding stone made of abrasive grains bound together by a bonding material, thereby forming on the outer circumferential edge portion a slanted surface that is inclined to the first surface so as to be progressively closer to the second surface in a direction from a central area of the wafer toward an outer circumferential edge thereof; and coating the first surface of the wafer with a liquid material according to a spin coating process, thereby forming a resist film on the first surface of the wafer.

An embodiment disclosed herein includes a method of dicing a wafer comprising a plurality of integrated circuits. In an embodiment, the method comprises forming a mask above the semiconductor wafer, and patterning the mask and the semiconductor wafer with a first laser process. The method may further comprise patterning the mask and the semiconductor wafer with a second laser process, where the second laser process is different than the first laser process. In an embodiment, the method may further comprise etching the semiconductor wafer with a plasma etching process to singulate the integrated circuits.

A method for manufacturing a display device is provided. A process of forming an inspection pattern, in which a protective film unit is partially removed in a thickness direction, in a pad area portion of the protective film unit, which corresponds to a pad area of a display unit, may be performed, and then, a process of delaminating the pad area portion of the protective film unit may be performed. A process of checking whether the inspection pattern exists may be performed to check whether the delamination has succeeded, and, at the same time, a process of measuring distances from an alignment mark to each of a long side and a short side of the display unit may be performed.