A time period for cleaning performed to remove a deposit formed within a chamber main body can be reduced. A plasma processing method including the cleaning of an inside of the chamber main body of a plasma processing apparatus is provided. The method includes etching including a main etching of etching an etching target film of a processing target object placed on a stage in a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; carrying-out the processing target object from a chamber; and cleaning the inside of the chamber main body by generating plasma of a cleaning gas in a state that a temperature of an electrostatic chuck is set to be high.

A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.

Provided are a substrate chuck and a substrate bonding system including the substrate chuck. The substrate bonding system includes a lower substrate chuck and an upper substrate chuck disposed on the lower substrate chuck. The lower substrate chuck has a non-flat lower substrate contact surface, and the upper substrate chuck has a flat upper substrate contact surface.

A cutting apparatus is provided. The cutting apparatus includes a processing chamber, a chuck table, a transferring mechanism, and a cleaning member. The chuck table is disposed in the processing chamber and configured to hold a workpiece on a chuck surface of the chuck table during a cutting process. The transferring mechanism is configured to transfer the workpiece to the chuck surface before the cutting process or transfer the workpiece away from the chuck surface after the cutting process. The cleaning member is disposed in the processing chamber, and is configured to move across and clean the chuck surface, driven by the transferring mechanism.

The present disclosure, in some embodiments, relates to a workpiece bonding apparatus. The workpieces bonding apparatus includes a first substrate holder having a first surface configured to receive a first workpiece, and a second substrate holder having a second surface configured to receive a second workpiece. A vacuum apparatus is positioned between the first substrate holder and the second substrate holder and is configured to selectively induce a vacuum between the first surface and the second surface. The vacuum is configured to attract the first surface and the second surface toward one another.

There is provided a processing method including the steps of measuring a thickness of the wafer, holding the wafer on a holder, supplying a liquid resin to a table that faces the holder, relatively moving the holder and the table closely to each other to coat the wafer with the liquid resin, and hardening the liquid resin that has coated the wafer. In the resin applying step, a distance by which the holder and the table are to be relatively moved closely to each other to coat the wafer with the liquid resin is determined depending on the measured thickness of the wafer.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Provided are a film for manufacturing semiconductor component, a film for electronic component manufacture, a method for manufacturing a semiconductor component using such a film for manufacturing semiconductor component, and a method for manufacturing an electronic component using such a film for electronic component manufacture. The film for component manufacture includes a base layer and an adhesive layer provided on one surface side of the base layer, and the Ra (μm) of the surface of one side of the base layer on which the adhesive layer is not provided is 0.1 to 2.0, and the Rz (μm) is 1.0 to 15. The method using the film for component manufacture includes a segmenting step, a pickup step, and an evaluation step prior to the pickup step.

Described is an affixing apparatus capable of flattening a surface of a film affixed to a main surface of a plate-shaped body. An affixing apparatus for affixing the film to the plate-shaped body includes: a plate-shaped mounting member provided with a mounting portion on which the plate-shaped body is mounted; a plate-shaped pressing member installed at a position facing the mounting member; and a support member installed at an outer edge of the mounting portion so as to be positioned between the mounting member and the pressing member.

The present disclosure describes methods and systems for processing semiconductor wafers. A method for processing a wafer includes measuring one or more wafer characteristics of the wafer using a plurality of detectors. The wafer includes a device region and a perimeter region. The method also includes determining a wafer modification profile of the wafer based on the measured one or more wafer characteristics. The method further includes modifying a ring-shaped portion of the wafer within the perimeter region using the wafer modification profile. The modified ring-shaped portion has a penetration depth that is less than a thickness of the wafer. The method further includes performing a wafer thinning process on the wafer.