Operating a substrate processing system includes receiving a plurality of sets of training data, storing a plurality of machine learning models, storing a plurality of physical process models, receiving a selection of a machine learning model from the plurality of machine learning models and a selection of a physical process model from the plurality of physical process models, generating an implemented machine learning model according to the selected machine learning model, calculating a characterizing value for each training spectrum in each set of training data thereby generating a plurality of training characterizing values with each training characterizing value associated with one of the plurality of training spectra, training the implemented machine learning model using the plurality of training characterizing values and plurality of training spectra to generate a trained machine learning model, and passing the trained machine learning model to a control system of the substrate processing system.

A substrate stacking apparatus that stacks first and second substrates on each other, by forming a contact region where the first substrate held by a first holding section and the second substrate held by a second holding section contact each other, at one portion of the first and second substrates, and expanding the contact region from the one portion by releasing holding of the first substrate by the first holding section, wherein an amount of deformation occurring in a plurality of directions at least in the first substrate differs when the contact region expands, and the substrate stacking apparatus includes a restricting section that restricts misalignment between the first and second substrates caused by a difference in the amount of deformation. In the substrate stacking apparatus above, the restricting section may restrict the misalignment such that an amount of the misalignment is less than or equal to a prescribed value.

A method for manufacturing a semiconductor device includes chucking in which a semiconductor device wafer is attached to an upper surface of a chuck mechanism with its device surface down; and edge trimming performed after the chucking, wherein the edge trimming comprises: rotating the semiconductor device water horizontally by the chuck mechanism; rotating a rotating blade horizontally by a vertical spindle to which an ultrasonic wave is applied and trimming a circumferential side surface of the semiconductor device wafer by the rotating blade.

A processing method for a wafer includes a thermocompression-bonding sheet arrangement step of arranging, on a front side of the wafer, a thermocompression-bonding sheet of a size sufficient to cover the wafer, an integration step of pressing the thermocompression-bonding sheet under heat by a planarizing member, so that the thermocompression-bonding sheet is planarized and the thermocompression-bonding sheet and the wafer are integrated together, a grinding step of holding the wafer on a side of the thermocompression-bonding sheet on a chuck table of a grinding apparatus and grinding the wafer to a desired thickness while supplying grinding water to a back side of the wafer, and a thermocompression-bonding sheet rinsing step of unloading the integrated wafer from the chuck table and rinsing the thermocompression-bonding sheet.

The present disclosure is an alignment mechanism of a bonding machine, in particular an alignment mechanism of a wafer bonding machine, which mainly has a support pedestal, at least three first alignment pins, and at least three second alignment pins, a first cam and a second cam. When the first cam rotates relative to the support pedestal, it will drive the first alignment pin to move relative to the support pedestal to position the first substrate on the support pedestal. When the second cam rotates relative to the support pedestal, it drives the second alignment pin to move relative to the support pedestal to position the second substrate above the first substrate, so that the second substrate is aligned with the first substrate to facilitate bonding the first substrate and the second substrate.

A peeling layer is formed by applying a laser beam only to a central region of a workpiece other than a peripheral region extending inward from the peripheral edge of the workpiece by a predetermined distance. In this case, the application of the laser beam does not form the peeling layer in the peripheral region of the workpiece, and the formation of an ablation trace on the outer peripheral surface of the workpiece is prevented. As a result, it is possible to reduce a probability of occurrence of chipping in the peripheral region of a wafer peeled off from the workpiece when the wafer is subjected to a post-process.

A method and a device for prefixing substrates, whereby at least one substrate surface of the substrates is amorphized in at least one surface area, characterized in that the substrates are aligned and then make contact and are prefixed on the amorphized surface areas.

A double-side polishing method, including: simultaneously polishing both surfaces of a semiconductor wafer by holding the semiconductor wafer in a carrier, interposing the held semiconductor wafer between an upper turn table and a lower turn table each having a polishing pad attached thereto, and bringing both surfaces of the semiconductor wafer into sliding contact with the polishing pads, wherein the semiconductor wafer is polished under a condition that a thickness A (mm) of the polishing pad attached to the upper turn table and a thickness B (mm) of the polishing pad attached to the lower turn table satisfy relations of 1.0≤A+B≤2.0 and A/B>1.0. This provides a double-side polishing method capable of obtaining a semiconductor wafer in which F-ZDD<0 while controlling the GBIR value to be equal to or smaller than a required value.

An apparatus for transferring a semiconductor die from an arrangement dies to a target is provided and relates to a wafer stage, and film frame carrier, and to an assembly including the film frame carrier and arrangement of dies. The wafer chuck includes a rotationally mounted curved shell on which the arrangement of semiconductor dies can be arranged. The wafer stage includes a motor for rotating the curved shell around a rotational axis. The configuration allows improved throughput of the wafer stage. The carrier used with this wafer stage includes a ring-shaped body with an asymmetric bending stiffness allowing the ring-shaped body to be bent so that the mounting surface of the ring-shaped body changes from a first shape to a second more concave shape and prevents or limits the ring-shaped body to be bent so that the mounting surface becomes more convex than the first shape.

An apparatus for removing a bipolar element for a display module includes: a remover that removes the bipolar element; and a solvent storage that supplies solvent to the remover, wherein the remover includes: a partition wall defining a solvent channel which the solvent is injected into and discharged from; and a vibrator disposed inside the solvent channel.