An object is to provide a polishing pad that can reduce generation of scratches, and a method for producing a polished product. A polishing pad including a polyurethane sheet as a polishing layer, wherein the polyurethane sheet exhibits a peak of loss tangent tan δ in the range from 40 to 60° C. in dynamic viscoelasticity measurement performed under conditions of a frequency of 1.6 Hz and a temperature of 20 to 100° C. in a water immersion condition.

A method and apparatus for bonding a processor wafer with a microchannel wafer/glass manifold to form a bonded wafer structure are provided. A glass fixture is also provided for protecting C4 solder bumps on chips disposed on the processor wafer. When the glass fixture is positioned on the processor wafer, posts extending from the glass fixture contact corresponding regions on the processor wafer devoid of C4 solder bumps, so that the glass fixture protects the C4 solder bumps during wafer bonding. The method involves positioning the processor wafer/glass fixture and the microchannel wafer/glass manifold in a metal fixture having one or more alignment structures adapted to engage corresponding alignment elements formed in the processor wafer, glass fixture and/or glass manifold. The metal fixture secures the wafer components in place and, after melting solder pellets disposed between the processor wafer/glass fixture and microchannel wafer/glass manifold, a bonded wafer structure is formed.

A resin molding apparatus and a cleaning method of a workpiece which can prevent a workpiece from being carried into a mold die in a state where particles (dust) are adhered to the workpiece, and can prevent deterioration of molding quality. A resin molding apparatus according to the present invention, in which a workpiece with an electronic component mounted on a carrier and a mold resin are carried into a mold die, includes: a press part having the mold die for clamping and resin-sealing the workpiece and the mold resin; and a cleaning apparatus for cleaning a back surface of the workpiece conveyed to the press part, wherein the electronic component is not mounted on the back surface. The cleaning apparatus is arranged at a position overlapping a conveyance path of the workpiece on the upstream side of the press part.

A cutting method includes: disposing a dicing tape on a back surface of a wafer; holding the wafer on a chuck table through the dicing tape; causing a cutting blade to cut into the wafer held on the chuck table until the tip of the cutting blade reaches the dicing tape to form cut grooves; imaging the cut groove from the front surface side of the wafer by a first imaging section to form a picked-up image of a front surface portion of the cut groove, and imaging the cut groove from the front surface side of the wafer by a second imaging section to form a picked-up image of a back surface portion of the cut groove, thereby checking the picked-up images of the front surface portion and the back surface portion of the cut groove.

An apparatus for manufacturing an element array includes a substrate hold means, a laser radiation device, and a collection mechanism. The substrate hold means holds a substrate including an adhesive layer on which elements are attached in a predetermined array while a surface of the adhesive layer is inclined relative to a horizontal surface at a predetermined angle. The laser radiation device radiates a laser to a specific element among the elements attached on the adhesive layer. The collection mechanism is disposed below the substrate and configured to receive the specific element falling by the laser radiation.

A processing method for a workpiece includes a cutting step of cutting the workpiece along streets by a cutting blade having a V-shaped tip end, to form V grooves of which shallower parts are wider than deeper parts, and a cleaning step of cleaning a back surface of the workpiece with cleaning water, after the cutting step is carried out.

A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.

A bonding apparatus configured to bond substrates includes a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a rotator configured to rotate the first holder and the second holder relatively; a moving device configured to move the first holder and the second holder relatively in a horizontal direction; three position measurement devices disposed at the first holder or the second holder rotated by the rotator and configured to measure a position of the first holder or the second holder; and a controller configured to control the rotator and the moving device based on measurement results of the three position measurement devices.

A wafer processing method includes preparing a holding table having a blade clearance portion formed therein so as to correspond to a notch of a wafer, holding the wafer by the holding table so as to make the notch of the wafer correspond to the blade clearance portion of the holding table, reducing the diameter of the wafer by cutting the wafer by a cutting blade along an outer peripheral edge of the wafer in a state in which an end of the cutting blade is positioned below the holding surface of the holding table and therefore removing at least a part of the notch portion, and forming a second notch in the wafer by cutting the wafer in a thickness direction by the cutting blade along the blade clearance portion of the holding table.

A method for processing electronic die includes providing a substrate having a plurality of electronic die formed as part of the substrate and separated from each other by spaces. The method includes placing the substrate onto a first carrier substrate. The method includes plasma etching the substrate through the spaces to form singulation lines adjacent the plurality of electronic die. The method includes exposing the plurality of electronic die to solvent vapors, such as heated solvent vapors, under reduced pressure to reduce the presence of residual contaminants resulting from the plasma etching step.