A processing apparatus includes a holding unit holding a workpiece, a processing unit processing the workpiece held by the holding unit, a feeding mechanism for feeding the holding unit, and a control unit controlling the feeding mechanism. The holding unit has a chuck table for holding the workpiece and a base for detachably supporting the chuck table. The chuck table includes a plurality of kinds of chuck tables, one of which being selected according to the size or shape of the workpiece. The base is capable of mounting the chuck table selected from the plural kinds of chuck tables. The control unit functions to set feeding conditions including acceleration of the feeding mechanism according to the kind of the chuck table mounted on the base and to control the feeding mechanism under the feeding conditions according to the chuck table.

The present application relates to a substrate processing method for suppressing cracking and chipping of a laminated substrate manufactured by bonding a plurality of substrates. Further, the present application relates to a substrate processing apparatus capable of performing such a substrate processing method. The present method includes: rotating a laminated substrate manufactured by bonding a first substrate and a second substrate; applying a filler, having thermosetting property, to a gap between a peripheral portion of the first substrate and a peripheral portion of the second substrate; and curing the filler. Applying the filler and curing the filler are continuously performed in a same processing chamber.

To improve the throughput of substrate bonding. A substrate bonding apparatus that bonds first and second substrates so that contact regions in which the first and second substrates contact are formed in parts of the first and second substrates and the contact regions enlarge from the parts, the apparatus including: a detecting unit detecting information about the contact regions; and a determining unit determining that the first and second substrates can be carried out based on the information detected at the detecting unit. In the substrate bonding apparatus, the information may be information, a value of which changes according to progress of enlargement of the contact regions, and the determining unit may determine that the first and second substrates can be carried out if the value becomes constant or if a rate of changes in the value becomes lower than a predetermined value.

A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

A system includes a wafer shape metrology sub-system configured to perform one or more shape measurements on post-bonding pairs of wafers. The system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller receives a set of measured distortion patterns. The controller applies a bonder control model to the measured distortion patterns to determine a set of overlay distortion signatures. The bonder control model is made up of a set of orthogonal wafer signatures that represent the achievable adjustments. The controller determines whether the set of overlay distortion signatures associated with the measured distortion patterns are outside tolerance limits provides one or more feedback adjustments to the bonder tool.

A device includes a first set of modules configured for wafer shape correction and a second set of modules configured for wafer bonding. The first set of modules includes a metrology module configured to measure wafer shape data of a first wafer and a second wafer, including relative z-height values of the first wafer and the second wafer. A stressor film deposition module is configured to form a first stressor film on the first wafer. A stressor film modification module is configured to modify the first stressor film based on a first modification map that defines adjustments to internal stresses of the first wafer and is generated based on the wafer shape data. The second set of modules includes an alignment module configured to align the first wafer with the second wafer, and a bonding module configured to bond the first wafer to the second wafer.

A gettering layer forming device includes a spinner table having a surface for holding a face side of a wafer, and an annular rest surface disposed radially outwardly of the holding surface. An annular member is located on the rest surface surrounding the wafer such that a water bath is defined by the annular member and the wafer. A moving mechanism selectively places the annular member onto the rest surface and moves the annular member away from the rest surface, an abrasive grain nozzle charges free abrasive grains into the water bath, a water nozzle supplies water to the water bath to immerse the wafer in the water, an ultrasonic horn propagates ultrasonic vibrations to the free abrasive grains in the water, and a horizontally moving mechanism moves the ultrasonic horn and the holding table horizontally relative to each other in directions parallel to the holding surface.

An electrostatic clamping system including a platen, an electrostatic electrode associated with the platen, and a sealing cover having a concave lower surface defining a cavity and having a sealing ring extending about a periphery of the lower surface, the sealing cover movable relative to the platen for being moved onto, and being moved off of, a wafer disposed on the platen, the sealing cover further having an inlet valve for introducing a gas into a space between a cover body of the sealing cover and the wafer.

Deformation of substrates after the substrates are bonded can be suppressed. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit provided under the first holding unit and configured to attract and hold a second substrate from below; and a striker configured to press a central portion of the first substrate from above and bring the first substrate into contact with the second substrate. The first holding unit is configured to attract and hold a partial region of a peripheral portion of the first substrate, and the first holding unit attracts and holds the region which intersects with a direction, among directions from the central portion of the first substrate toward the peripheral portion thereof, in which a bonding region between the first substrate and the second substrate is expanded faster.