This disclosure teaches methods for making high-temperature superconducting striated tape combinations and the product high-temperature superconducting striated tape combinations. This disclosure describes an efficient and scalable method for aligning and bonding two superimposed high-temperature superconducting (HTS) filamentary tapes to form a single integrated tape structure. This invention aligns a bottom and top HTS tape with a thin intervening insulator layer with microscopic precision, and electrically connects the two sets of tape filaments with each other. The insulating layer also reinforces adhesion of the top and bottom tapes, mitigating mechanical stress at the electrical connections. The ability of this method to precisely align separate tapes to form a single tape structure makes it compatible with a reel-to-reel production process.

A laser beam spot shape correcting method includes a laser beam irradiating step of irradiating a concave mirror with a laser beam, an imaging step of imaging reflected light by a beam profiler, an image forming step of forming an XZ plane image or a YZ plane image from an XY plane image imaged in the imaging step, and a comparing step of comparing the image formed in the image forming step with an XZ plane image or a YZ plane image of an ideal laser beam. A phase pattern displayed on a display unit of a spatial light modulator is changed such that the XZ plane image or the YZ plane image formed in the image forming step coincides with the XZ plane image or the YZ plane image of the ideal laser beam.

An apparatus for processing an edge surface of a wafer comprises a lower chamber having a first supporting area configured to support the wafer, an upper chamber having a second supporting area, and a first channel formed by the first supporting area, the second supporting area and peripheral areas thereof. The upper chamber is engaged with the lower chamber to position the wafer between the first supporting area and the second supporting area. The first channel is configured to provide a first space to flow one or more chemical fluids for etching an edge area of the wafer. The upper chamber comprises a protrusion part being configured to resist against an outer edge of the wafer in order to align the central axis of the wafer with the central axis of the second supporting area. This disclosure can process the edge of wafers.

A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) providing a package body including at least one semiconductor device encapsulated in an encapsulant; (b) providing a flattening force to the package body; (c) thinning the package body after (b); (d) attaching a film to the package body; and (e) releasing the flattening force after (d).

A method and apparatus for wafer bonding are provided. The method includes: determining a first position parameter of a first alignment mark on a first wafer and a second position parameter of a second alignment mark on a second wafer by using a first type of optical beam; moving the first wafer and the second wafer to be opposite to each other by changing a relative position between the first wafer and the second wafer according to the first position parameter and the second position parameter, to achieve a first alignment of the first alignment mark and the second alignment mark; adjusting the relative position between the first wafer and the second wafer by using a second type of optical beam, to achieve a second alignment of the first alignment mark and the second alignment mark; and bonding the first wafer to the second wafer.

A cutting blade position detecting method using a cutting apparatus including a holding table that holds a workpiece, and a cutting unit in which a cutting blade for cutting the workpiece held by the holding table is mounted in a rotatable state, includes a groove forming step of causing the cutting blade to further cut into the workpiece including a first groove formed by causing the cutting blade to cut into the workpiece, to form the workpiece with a second groove of which one end portion in a width direction does not overlap with the first groove whereas another end portion in the width direction overlaps with the first groove, and a calculating step of calculating the lower end position of the cutting blade based on a length of the one end portion in the width direction of the second groove formed in the workpiece.

A wafer is positioned in an opening of a first frame. The wafer is pressure-bonded at one surface thereof to a first tape together with the first frame, onto a second tape pressure-bonded to a second frame. The wafer is processed by pressure-bonding the second tape, which is pressure-bonded to the second frame having an outer diameter smaller than an inner diameter of the opening of the first frame, to another surface of the wafer, cutting the first tape along an outer periphery of the second frame, imparting an external stimulus to the first tape to lower a pressure-bonding force with which the first tape is pressure-bonded to the one surface of the wafer, and peeling off the first tape from the one surface of the wafer pressure-bonded to the second tape.

A tape pressure bonding apparatus includes an upper chamber, a lower chamber, a lifting mechanism that switches between a closed state in which the upper chamber is moved downward to be brought into contact with the lower chamber and an open state in which the upper chamber is separated from the lower chamber, a vacuum section that evacuates the upper chamber and the lower chamber, and an atmosphere opening section that opens the upper chamber and the lower chamber to the atmosphere. The lower chamber accommodates a wafer table that has a holding surface including a circular recess for supporting only a peripheral surplus region of the wafer and making a device region in a non-contact state. The tape pressure bonding apparatus includes a positive pressure generating section that supplies air into the circular recess of the wafer table to establish a positive pressure state in the circular recess.

An alignment mechanism of a bonding machine includes a support pedestal, three first alignment members, and three second alignment members. The support pedestal includes a supporting surface having a placement area for supporting a first substrate, and the first and second alignment members are arranged around the placement area. The first alignment members each include a protruding part and a base. The protruding part is used in supporting a second substrate, and protrudes from the base and directed to the placement area. The base is used to position the first substrate. The second alignment members position the second substrate to align the first and second substrates and facilitate the bonding of the first and second substrates.

A bonding apparatus configured to bond substrates includes a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder, and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a mover configured to move the first holder and the second holder relatively in a horizontal direction; a laser interferometer system configured to measure a position of the first holder or the second holder which is moved by the mover; a linear scale configured to measure a position of the mover; and a controller configured to control the mover based on a measurement result of the laser interferometer system and a measurement result of the liner scale.