Systems and methods are provided for monitoring wafer bonding and for detecting or determining defects in a wafer bond formed between two semiconductor wafers. A wafer bonding system includes a camera configured to monitor bonding between two semiconductor wafers. Wafer bonding defect detection circuitry receives video data from the camera, and detects a bonding defect based on the received video data.

An etching method including: a preparation step of preparing a resin layer and an electronic component supported thereby; and a resin etching step of etching the resin layer. The electronic component has a first surface covered with a protective film, a second surface opposite thereto, and a sidewall therebetween. The second surface is facing the resin layer. The resin layer is larger than the electronic component when seen from the first surface side. The resin etching step includes: a deposition step of depositing a first film, using a first plasma, on a surface of the protective film and a surface of the resin layer; and a removal step of removing, using a second plasma, the first film deposited on the resin layer and at least part of the resin layer. The deposition and removal steps are alternately repeated, with the protective film allowed to continue to exist.

A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

A method for manufacturing a semiconductor device is provided. The manufacturing method includes attaching a substrate to a sheet. The manufacturing method includes fragmenting the substrate into a plurality of individual chips. The manufacturing method includes expanding the sheet to widen the spacing between the plurality of chips. The manufacturing method includes covering the main surface and side surface of each of the plurality of chips with resin and sealing the chips to form a sealed body. The manufacturing method includes forming a stacked body in which a plurality of sealed bodies are stacked. The plurality of sealed bodies include a first sealed body and a second sealed body. Forming the stacked body includes stacking the second sealed body on the first sealed body in a state where the position of the chip in the second sealed body is offset in a direction in the plane with respect to the position of the chip in the first sealed body.

A structural body is partially surrounded by a positioning plate, and a semiconductor element, a joining member, and a base plate around the joining member are exposed from the positioning plate, so that a positional relationship between the semiconductor element and the base plate is maintained. The joining member is heated by a heater while the semiconductor element, joining member, and base plate exposed from the positioning plate are isotropically pressurized by a piston via a medium and a bag member.

The present invention provides a method for plasma dicing a substrate. The method comprising a process chamber having a wall with a plasma source adjacent to the wall of the process chamber is provided. A work piece support and a cover plate are positioned within the process chamber. A work piece is placed onto the work piece support wherein the work piece has a support film, a frame and the substrate. A plasma is generated using the plasma source. Residual material is etched from an edge of the substrate of the work piece using the generated plasma while a majority of an upper surface of the substrate of the work piece is covered by the cover plate.

A method, for bonding a first wafer to a second wafer, includes generating a first modification map based on wafer shape data of the first wafer and the second wafer. The first modification map defines adjustments to internal stresses of the first wafer. A first wafer shape of the first wafer is modified by forming a first stressor film on the first wafer based on the first modification map. The first wafer is aligned with the second wafer after the modifying. The first wafer is bonded to the second wafer.

A stacking apparatus that stacks substrate and a second substrate includes: a plurality of holding members that hold the first substrate, wherein the plurality of bolding members correct positional misalignment of the first substrate relative to the second substrate by preset amounts of correction, and the plurality of holding members include holding members having the amounts of correction that are different from each other. The stacking apparatus may further include a carrying unit that carries a holding member that is selected from among the plurality of holding members and holds the first substrate from a position here the holding member is housed to a position where the first substrate is held.

A workpiece processing apparatus which coats a front surface of a workpiece with a resin, the workpiece having devices formed in regions demarcated by a plurality of planned dividing lines formed in a lattice pattern. The workpiece processing apparatus includes a cassette mounting base mounted with a cassette housing a plurality of workpieces, a resin coating unit that coats the front surface of the workpiece with the resin, a resin curing unit that cures the resin by applying an external stimulus to the coated resin, a resin grinding unit that flattens the cured resin by grinding the cured resin by a rotating grinding stone, and a conveying mechanism that conveys the workpiece between the units.

In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.