A laser applying apparatus includes a beam spot shaper for shaping a spot of a laser beam into a slender spot and orienting the polarization direction of a linearly polarized laser beam of the laser beam along a longer side of the slender spot, and a spot control unit for positioning a P-polarized laser beam on slanted surfaces of a recess that is formed in a wafer by orienting the longer side of the slender spot transversely across projected dicing lines and for orienting a shorter side of the slender spot in a processing direction along the projected dicing lines. A method of processing a wafer includes a functional layer removing step that is a step of removing a functional layer on a semiconductor substrate of the wafer by applying laser beams to the projected dicing lines with the use of the laser applying apparatus. The functional layer removing step is carried out a plurality of times to remove the functional layer on the projected dicing lines.

A hubbed blade to be mounted on a spindle includes a circular hub and a circular blade fixed on a side of a first side of the hub. The blade has an opening formed through its center. The hub includes a protrusion portion protruding from the first side and having an outer peripheral edge of a shape corresponding to a shape of the opening. The hub and the blade are connected together via an adhesive with the hub and the blade being aligned each other with the protrusion portion inserted in the opening.

A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the <1120> direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.

A planarization apparatus comprising a superstrate chuck is provided. The superstrate includes a plurality of inner lands protruding from a surface of the superstrate chuck and a peripheral land protruding from the surface of the superstrate chuck along a periphery of the superstrate chuck and encircling the inner lands therein. The peripheral land has a height smaller than a height of each of the inner lands. The peripheral land has a width sufficiently larger than a width of each of the inner lands such that a pressure leakage through the peripheral land is controlled to be less than a threshold.

An ultrasonic device is provided and includes an action member, a driving member and a rotating shaft connected to the driving member. The action member provides ultrasonic vibration and vibrates the driving member, so that the driving member oscillates to make the rotating shaft and a cutter oscillate in the same direction together, so the cutter can remove scrap by oscillating during the cutting operation.

An integrated wafer debonding and cleaning apparatus and a debonding and cleaning method are provided. The integrated wafer debonding and cleaning apparatus includes an input port, a debonding module, a wafer cleaning device, and a transport device. The input port is configured to allow a substrate to be processed to enter the integrated wafer debonding and cleaning apparatus. The substrate to be processed includes a wafer and a carrier which are bonded. The debonding module is configured to debond the substrate to be processed, and to separate the wafer from the carrier. The wafer cleaning apparatus is configured to clean the wafer. The transport device is configured to transfer the substrate to be processed, the wafer, and the carrier. The debonding module and the wafer cleaning module are integrated in one apparatus for continuous processing.

A method includes determining a first offset between a first alignment mark on a first side of a first wafer and a second alignment mark on a second side of the first wafer; aligning the first alignment mark of the first wafer to a third alignment mark on a first side of a second wafer, which includes detecting a location of the second alignment mark of the first wafer; determining a location of the first alignment mark of the first wafer based on the first offset and the location of the second alignment mark of the first wafer; and, based on the determined location of the first alignment mark, repositioning the first wafer to align the first alignment mark to the third alignment mark; and bonding the first side of the first wafer to the first side of the second wafer to form a bonded structure.

This disclosure relates to an adhesive dispense unit for a semiconductor die bonding apparatus. The adhesive dispense unit includes an adhesive dispense nozzle and a pin member; the pin member comprising a down stand portion and a sheath portion, and the down stand is reciprocateable within the sheath portion.

Systems and methods are provided for monitoring wafer bonding and for detecting or determining defects in a wafer bond formed between two semiconductor wafers. A wafer bonding system includes a camera configured to monitor bonding between two semiconductor wafers. Wafer bonding defect detection circuitry receives video data from the camera, and detects a bonding defect based on the received video data.

There is provided a carrier plate removing method for removing a carrier plate from a workpiece disposed on a top surface of a carrier plate via a provisional bonding layer. The carrier plate removing method includes a stepped portion forming step of forming a stepped portion in which the workpiece projects sideward as compared with the carrier plate by processing the carrier plate so as to remove a peripheral portion of the carrier plate along a peripheral edge of the carrier plate from an undersurface side opposite from the top surface of the carrier plate, a carrier plate holding step of holding the carrier plate by a carrier plate holding unit, and a removing step of removing the carrier plate from the workpiece by applying a force from the carrier plate side to the stepped portion, and moving the workpiece in a direction of separating from the carrier plate.