A laser beam application unit of a laser processing machine includes a laser oscillator, a spot shaper, a polygon mirror, and a condenser. The laser oscillator emits a pulsed laser beam. The spot shaper is configured to shape a spot profile of the pulsed laser beam emitted from the laser oscillator such that the spot profile becomes long in a Y-axis direction and short in an X-axis direction. The polygon mirror disperses the spot, which has been shaped by the spot shaper, in the X-axis direction. The condenser focuses the pulsed laser beam, which has been dispersed by the polygon mirror, on a workpiece held on a chuck table.

A sheet attaching apparatus includes a sheet attaching section that attaches a sheet to a workpiece, and a sheet cutting section that cuts off the sheet from the workpiece along an outer edge. The sheet cutting section includes a chuck table that holds the workpiece, a sheet holding section that detachably holds a peripheral portion of the sheet, a cutting section that cuts the sheet along the outer edge of the workpiece, and a sheet accommodating section that accommodates an unnecessary part of the sheet cut and dropped due to release of holding by the sheet holding section.

An apparatus for manufacturing a display device, includes: a stage; a temperature controlling portion on the stage, and to receive a member seated on the temperature controlling portion; and a jig portion facing the temperature controlling portion, the jig portion to move linearly, and to receive an adhesive member. The jig portion includes: a first support plate; a second support plate facing the first support plate; and a pressurization plate on the first support plate and the second support plate, the pressurization plate to receive the adhesive member thereon. An end of the pressurization plate is spaced further from the member than an end of the first support plate and an end of the second support plate when the member is seated on the temperature controlling portion.

A manufacturing method of chips includes forming modified layers that become points of origin of dividing along planned dividing lines, grinding the back surface of the wafer by grinding abrasive stones to thin the wafer into a finished thickness, and dividing the wafer into the chips along the planned dividing lines using the modified layers as the points of origin. The manufacturing method also includes sticking an expanding tape having elasticity to the back surface of the wafer for which grinding processing has been executed, expanding the expanding tape and widening the interval between the respective chips along the planned dividing lines.

A semiconductor manufacturing apparatus includes a stage configured to mount a wafer on a mounting surface. A blade is configured to cut an outer circumference portion of the wafer toward the mounting surface. The stage includes a protrusion portion provided at a position corresponding to a first region where a material film is not formed on a first surface of the outer circumference portion of the wafer facing the mounting surface.

The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.

Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

A method of manufacturing a wafer includes a wafer preparing step of preparing a wafer having semiconductor devices formed in a plurality of respective areas demarcated thereon by a plurality of intersecting streets, a removing step of removing from the wafer a defective device region including a semiconductor device determined as a defective product among the semiconductor devices formed on the wafer, an enlarging step of enlarging a removed region formed in the wafer by removing the defective device region from the wafer, and an inlaying step of inlaying a device chip including a non-defective semiconductor device that is functionally identical to the semiconductor device determined as the defective product, in the enlarged removed region.

According to one embodiment, a manufacturing apparatus includes: a storage configured to store a work; a transfer arm configured to transfer the work; a hot bath configured to store a liquid; a mounting table configured to mount the work in the hot bath; and an upper arm configured to apply pressure to the work mounted on the mounting table.