The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

A measuring method includes measuring a displacement A1, placing an imaging unit 20 at a position where the imaging unit is allowed to image a measurement mark M1 and imaging the measurement mark M1. In the measuring of the displacement A1, the displacement A1 of a surface of a combined substrate, which is composed of two sheets of substrates bonded to each other, on a side of the imaging unit 20 at a position where the measurement mark M1 for position deviation measurement, which is provided within the combined substrate, is placed is measured. In the imaging of the measurement mark M1, the measurement mark M1 is imaged by the imaging unit 20 while putting the measurement mark M1 in focus by moving a focal position back and forth with respect to a focal position which is previously set based on the displacement A1.

A bonding apparatus configured to bond substrates includes a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a rotator configured to rotate the first holder and the second holder relatively; a moving device configured to move the first holder and the second holder relatively in a horizontal direction; three position measurement devices disposed at the first holder or the second holder rotated by the rotator and configured to measure a position of the first holder or the second holder; and a controller configured to control the rotator and the moving device based on measurement results of the three position measurement devices.

A chip bonding apparatus includes a chip separation unit, a chip alignment unit, a chip bonding unit and a bonding robotic arm unit. The bonding robotic arm unit includes a first bonding robotic arm unit and a second bonding robotic arm unit. The first bonding robotic arm unit includes a first motion stage, a first driver configured to drive the first motion stage and at least one first bonding robotic arm arranged on the first motion stage. The first bonding robotic arm is configured to suck up a chip from the chip separation unit and deliver it to the chip alignment unit. The second bonding robotic arm unit includes a second motion stage, a second driver configured to drive the second motion stage and at least one second bonding robotic arm arranged on the second motion stage.

A substrate processing system includes a pre-alignment apparatus having a pre-alignment stage configured to hold a processing target substrate and a detector configured to detect a center position and a crystal orientation of the processing target substrate held by the pre-alignment stage; and a laser processing apparatus having a laser processing stage configured to hold the processing target substrate and a laser processing head configured to radiate and concentrate a laser beam for processing the processing target substrate to the processing target substrate held by the laser processing stage. The pre-alignment apparatus is disposed above the laser processing apparatus.

A substrate processing system configured to process a substrate includes an eccentricity detection device configured to detect, in a combined substrate in which a first substrate and a second substrate are bonded to each other, an eccentricity of the first substrate; a modification layer forming device configured to form a modification layer within the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; and a periphery removing device configured to remove the peripheral portion starting from the modification layer.

A warpage reduction device the present disclosure includes a jig having a warped shape capable of distributing stress of a workpiece, a light source heating the workpiece so as to be flat, a pressurizer applying pressure to the heated workpiece to be pressed against the jig so as to be deformed, a cooler cooling the deformed workpiece, and a controller controlling operations of the light source, the pressurizer, and the cooler.

To provide a wafer processing method which can simplify the wafer processing process and efficiently obtain chips of stable quality. A wafer processing method includes: a tape attaching step of attaching a back grinding tape to the front surface of a wafer; a modified region forming step of applying a laser beam from the back surface of the wafer along a cut line to form modified regions inside the wafer; a back surface processing step of processing the back surface of the wafer having the modified regions to reduce a thickness of the wafer; and a dividing step of, in a state in which the back grinding tape is attached to the front surface of the wafer, applying a load to the cut line from the back surface of the wafer to divide the wafer along the cut line and obtain individual chips.

A substrate processing method of processing a substrate includes: forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam; and processing a front surface of the substrate in a state that the rear surface of the substrate is held. A modification device includes a laser irradiation unit configured to form a modification layer at least on a surface layer of the rear surface of the substrate or within the substrate by radiating a laser beam.

Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.