A semiconductor package sawing device is provided that includes a semiconductor package sawing unit, an automatic tool providing portion disposed adjacent to the semiconductor package sawing unit, and a semiconductor package alignment portion. The automatic tool providing portion includes a transfer unit for transferring a chuck unit to the semiconductor package sawing unit.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form division grooves in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyester sheet in each region of the polyester sheet corresponding to each device chip, pushing up each device chip from the polyester sheet side to pick up each device chip from the polyester sheet.

An in-situ spark erosion dressing system includes a working platform, a moving platform, a cutting device, a spark erosion dressing device and a controller. The moving platform is coupled to the working platform and configured to load a work piece. The cutting device is coupled to the working platform and has a first cutting position and a first dressing position. The cutting device includes a wheel blade and the wheel blade cuts the work piece on the first cutting position. The spark erosion dressing device is coupled to the moving platform and includes a dressing electrode. The dressing electrode contacts the wheel blade on the first dressing position, and the spark erosion dressing device applies the discharge energy on the dressing electrode to dress the wheel blade. The controller controls the cutting device to move to the first cutting position according to a cutting resistance value.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of blowing out air to push up each device chip and picking up each device chip from the polyester sheet.

A processing apparatus includes a chuck table that holds a workpiece, a cutting unit that processes the workpiece held by the chuck table, a cassette placing region where a cassette is placed, a carrying unit that carries the workpiece between the cassette placed in the cassette placing region and the chuck table, and a surrounding wall that partitions a route for lifting the cassette upward and downward from an external space, in a space directly above the cassette placing region. A height of the surrounding wall is equal to or more than a height of a ceiling wall of the processing apparatus and is so as not to interfere with the cassette held by a carrier that travels.

A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

A method and corresponding device for bonding a first contact surface of a first substrate to a second contact surface of a second substrate. The method includes the steps of arranging a substrate stack, formed from the first substrate and the second substrate and aligned on the contact surfaces, between a first heating surface of a first heating system and a second heating surface of a second heating system.

A method and a device for bonding a first substrate with a second substrate at mutually facing contact faces of the substrates.

A system to manufacture a plurality of dies may include an etching tool, an electrically-conductive-adhesive-composition, a heat-applying-extraction-tool and a porous substrate cooperating with an evacuation component. The etching tool uses an ion beam that is configured to singulate a plurality of dies on a wafer with an ion etching process. The electrically-conductive-adhesive-composition is located between the wafer and a porous substrate carrying the wafer during the ion etching process. The electrically-conductive-adhesive-composition adheres the wafer to the porous substrate to keep the dies in place during the ion etching process. The electrically-conductive-adhesive-composition also aids in conducting electrons away from the wafer as a drain during the ion etching process. The heat-applying-extraction-tool applies heat to an individual die during a handling process of the manufacturing process in order to melt the electrically-conductive-adhesive-composition through the porous substrate to an evacuation component in order to then pick up an individual die singulated from the wafer.

A method and apparatus for use in a wafer processing are disclosed. In an embodiment a includes providing the wafer on a receptacle, wherein the receptacle comprises a light port, and wherein the light port includes a source of light, shining a light from the source of light at an edge of the wafer thereby passing light by the edge of the wafer and processing the wafer on the receptacle based on the light passing by the edge of the wafer and received by a light sensitive element.