The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned. The present invention also provides an apparatus including the high temperature chemical solution supply system and an ultra or mega sonic device for cleaning the substrate. The present invention also provides methods for cleaning the substrates.

A method for forming semiconductor devices includes: grinding a backside of a semiconductor wafer with a grinding wheel during a first time interval, wherein the grinding wheel is forward moved during the first time interval, wherein a plurality of semiconductor devices are formed on the semiconductor wafer; and polishing the backside of the semiconductor wafer with the grinding wheel in a second time interval, wherein the grinding wheel is backward moved during the second time interval.

A method for bonding a first substrate and a second substrate includes: forming a protrusion at a partial region of the first substrate; measuring a position of the first substrate after the protrusion is formed in the first substrate; and bonding the first substrate and the second substrate by contacting the protrusion of the first substrate with a surface of the second substrate to form a contact region and enlarging the contact region.

A debonding leveling device and a debonding method are for leveling during a process for debonding a first object and a second object. The first and second objects are retained by a first fixation plate (11) and a second fixation plate (21), respectively. The device includes: a mounting plate (30), disposed at an outer side of one of the first (11) and second (21) fixation plates; a connecting rod assembly (40) fixed around a center position of the mounting plate (30), the connecting rod assembly (40) connected to the one of the first (11) and second (21) fixation plates sequentially via a sliding pair (50) and a spherical pair (60) connected to the sliding pair (50); and at least three elastic assemblies (70) disposed between the mounting plate and the one of the first and second fixation plates, each of the elastic assemblies coupled to the mounting plate (30) and the one of the first (11) and second (21) fixation plates. The combination of the spherical pair and the sliding pair allows an adaptation of leveling objects to dynamic changes of the reference, and the elastic assemblies performs a leveling for the leveling objects in real-time based on an orientation of the reference. This entails a simple structure with a reasonable layout, which is easy to use in practice and is particularly helping in dynamic leveling applications without requiring an active control.

There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.

A method for sawing a semiconductor wafer is provided. The method includes sawing a semiconductor wafer to form a first opening. In addition, the semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape by a die attach film (DAF), and the first opening is formed in an upper portion of the substrate. The method further includes sawing through the substrate and the DAF of the semiconductor wafer from the first opening to form a middle opening under the first opening and a second opening under the middle opening, so that the semiconductor wafer is divided into two dies. In addition, a slope of a sidewall of the middle opening is different from slopes of sidewalls of the first opening and the second opening.

According to one embodiment, a dicing method is provided. The dicing method includes detecting a first distance between a first portion of a substrate and a first substrate information detection unit. The method also includes detecting a second distance between a second portion of the substrate a second substrate information detection unit, the second portion different from the first portion. Distance information is calculated between the substrate and a processing lens, which is located farther from the second substrate information detection unit than from the first substrate information detection unit, based on the detected first distance and the detected second distance, and the substrate is irradiated with laser light from the processing lens based on the distance information.

Cleave systems for cleaving a semiconductor structure are disclosed. The cleave systems may include a cleave arm that is moveable from a starting position to a raised positon in which a cleave stress is applied to the semiconductor structure. Spring members store energy as the cleave arm is raised with the stored spring energy causing the structure to cleave into two pieces upon initiation of the cleave across the structure.

A liquid supply mechanism disposed over a holding unit of laser processing apparatus includes a liquid chamber having a circular-disc-shaped transparent plate positioned to form a gap between the circular-disc-shaped transparent plate and an upper surface of the workpiece held by the holding table, a liquid supply nozzle that supplies a liquid from one side of the liquid chamber to the gap, a liquid discharge nozzle that discharges the liquid from the other side of the liquid chamber, and a rotation mechanism that rotates the circular-disc-shaped transparent plate and generates a flow velocity in the liquid supplied to the gap. The laser beam irradiation unit includes a laser oscillator that emits a laser beam and a condenser that condenses the laser beam emitted from the laser oscillator and irradiates the workpiece with the laser beam transmitted through the transparent plate and the liquid supplied to the gap.

Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.