Provided are a laser machining device and a laser machining method capable of stably operating an autofocus function without causing an unfavorable state such as an overshoot etc. A laser machining device and a laser machining method of the present invention performs a normal AF (autofocus) control when a scan position of the machining laser light and the detecting laser light is located in a work central portion, and performs a slow-tracking AF (autofocus) control with a trackability to a displacement of a main surface of a work reduced to be lower than a trackability of the normal AF control when the scan position of the machining laser light and the detecting laser light is located in a work end portion.

A blade mounting and dismounting jig is provided for mounting a blade on and dismounting a blade from a flange of a cutting apparatus which includes a boss, a blade mount for mounting the blade fitted thereover, the flange having an annular end face for supporting the blade thereon and being fixed to a distal end of a spindle, and a holder that cooperates with the flange in gripping and securing the blade in position. The blade mounting and dismounting jig includes a cylindrical jig body, a grip coupled to the jig body and having a diameter larger than the jig body, a plurality of first air ejection ports defined in a distal end portion of the jig body, a plurality of second air ejection ports defined in the jig body at a juncture between the jig body and the grip.

A laser beam oscillated by a laser oscillator is condensed by a condenser. The condenser includes: a concave lens; a convex lens disposed at a predetermined interval from the concave lens, and disposed at a position such that aberration of a condensing point in the atmosphere is zero; and an actuator that generates an aberration at the condensing point in the atmosphere by changing the distance of the convex lens with respect to the concave lens. The actuator generates the aberration in the atmosphere such that the aberration of the condensing point is zero within a workpiece.

A semiconductor manufacturing apparatus according to an embodiment irradiates a semiconductor substrate with laser to form modified regions along an intended cut line in the semiconductor substrate. A light source emits the laser. An optical system comprises an objective lens configured to focus the laser in the semiconductor substrate. A light modulator is capable of modulating an energy density distribution of the laser. A controller controls the light modulator to displace a peak position of the energy density distribution of the laser from an optical axis of the objective lens in a relative movement direction of the optical system with respect to the semiconductor substrate.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

A wafer uniting method includes a thermocompression bonding step of causing a thermocompression bonding sheet having a size comparable to or greater than a size and a shape of a wafer and a front surface of the wafer to face each other, and pressing them against each other while applying heat to thermocompression bond the thermocompression bonding sheet to the front surface of the wafer. The thermocompression bonding sheet thermocompression bonded to the wafer in the thermocompression bonding step includes at least a first thermocompression bonding sheet and a second thermocompression bonding sheet.

A processing method for a wafer includes a thermocompression-bonding sheet arrangement step of arranging, on a front side of the wafer, a thermocompression-bonding sheet of a size sufficient to cover the wafer, an integration step of pressing the thermocompression-bonding sheet under heat by a planarizing member, so that the thermocompression-bonding sheet is planarized and the thermocompression-bonding sheet and the wafer are integrated together, a grinding step of holding the wafer on a side of the thermocompression-bonding sheet on a chuck table of a grinding apparatus and grinding the wafer to a desired thickness while supplying grinding water to a back side of the wafer, and a thermocompression-bonding sheet rinsing step of unloading the integrated wafer from the chuck table and rinsing the thermocompression-bonding sheet.

A cutting apparatus includes a cutting unit that cuts a workpiece included in a frame unit, an ultraviolet ray irradiation unit that irradiates the frame unit with ultraviolet rays, and a control unit. The control unit includes a processing mode registration section in which commands to be output to components. The processing mode registration section registers therein a command in a cutting apparatus mode that causes the cutting unit to cut the workpiece and a command in an ultraviolet ray irradiation apparatus mode that causes the ultraviolet ray irradiation unit to irradiate the frame unit with ultraviolet rays.

In one embodiment, a semiconductor manufacturing apparatus includes a polishing table configured to hold a polishing pad, a polishing head configured to hold a substrate to be polished by the polishing pad, and a polishing liquid feeder configured to feed a polishing liquid to the polishing pad. The apparatus further includes a heat exchanger configured to be placed on the polishing pad and control temperatures of the polishing pad and the polishing liquid, and one or more protruding portions provided on a side face or a bottom face of the heat exchanger.

A method for processing electronic die includes providing a substrate having a plurality of electronic die formed as part of the substrate and separated from each other by spaces. The method includes placing the substrate onto a first carrier substrate. The method includes plasma etching the substrate through the spaces to form singulation lines adjacent the plurality of electronic die. The method includes exposing the plurality of electronic die to solvent vapors, such as heated solvent vapors, under reduced pressure to reduce the presence of residual contaminants resulting from the plasma etching step.