The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

Provided are a film for manufacturing semiconductor component, a film for electronic component manufacture, a method for manufacturing a semiconductor component using such a film for manufacturing semiconductor component, and a method for manufacturing an electronic component using such a film for electronic component manufacture. The film for component manufacture includes a base layer and an adhesive layer provided on one surface side of the base layer, and the Ra (μm) of the surface of one side of the base layer on which the adhesive layer is not provided is 0.1 to 2.0, and the Rz (μm) is 1.0 to 15. The method using the film for component manufacture includes a segmenting step, a pickup step, and an evaluation step prior to the pickup step.

A wafer bonding apparatus may include a first chuck, a second chuck, and a pressure device. The first chuck may include a hole formed through a central portion of the first chuck. The second chuck may have a hole formed through a central portion of the second chuck. The pressure device may be configured to pressurize a wafer toward the second chuck through the holes. An air bearing may be interposed between the pressure device and the first chuck to suppress a dislocation of the pressure device.

A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

A method for manufacturing a semiconductor device includes the steps of a first separation process of separating the semiconductor layer from the first substrate by bringing a pick-up substrate into close contact with the semiconductor layer and then moving the pick-up substrate away from the first substrate, pressing of pressing the semiconductor layer that is in close contact with the pick-up substrate to the second substrate, temperature maintenance of maintaining temperatures of contact surfaces of the semiconductor layer and the second substrate at a temperature higher than room temperature while pressing the semiconductor layer onto the second substrate, and a second separation process of separating the semiconductor layer from the pick-up substrate after the temperatures of the contact surfaces are maintained at the temperature higher than room temperature.

A heat treatment apparatus for applying a heat treatment to a plurality of substrates including a product substrate and a dummy substrate includes: a process container configured to accommodate the plurality of substrates; a storage container provided outside the process container and configured to store the dummy substrate; and an oxidation mechanism configured to oxidize the dummy substrate stored in the storage container.

A degassing chamber and a semiconductor processing apparatus are provided. The degassing chamber includes a chamber; a substrate container, movable within the chamber in a vertical direction; and a heating component, disposed within the chamber. A substrate transferring opening is formed through a sidewall of the chamber for transferring substrates into or out of the chamber. The heating component includes a first light source component and a second light source component. The chamber is divided into a first chamber and a second chamber by the substrate transferring opening. The first light source component is located in the first chamber, and the second light source component is located in the second chamber. The first light source component and the second light source component are provided for heating a substrate in the substrate container.

A heater for a semiconductor processing chamber is disclosed that includes a ceramic body, and a resistive heating element embedded in the ceramic body, the resistive heating element disposed in a heater coil having an inner central sector and an outer central sector, the inner central sector having a plurality of first peaks and the outer central sector having a plurality of second peaks, wherein the number of first peaks is less than about fifty-six, and the number of second peaks is less than about eighty.

An electrostatic chuck device (1) including: an electrostatic chuck part (2) which includes a base material (11) having a mounting surface (11a) on which a plate-like sample W is mounted, and an internal electrostatic attraction electrode (13) which electrostatically attracts the plate-like sample (W) to the mounting surface (11a); a cooling base part (3) which is configured to cool the electrostatic chuck part (2); and an adhesive layer (4) which is interposed therebetween, in which a shape of the mounting surface of the base material (11) includes a concave surface (23) or a convex surface, which is a curved surface that gradually curves from a center (11b) of the mounting surface (11a) toward an outer periphery (11c) of the mounting surface (11a) and includes no inflection point, and an absolute value of a difference between a height of a center of the concave surface (23) or the convex surface from a position of a main surface (3a) of the cooling base part (3) as a reference and a height of an outer periphery of the concave surface (23) or the convex surface from the position of the main surface (3a) of the cooling base part (3) as a reference is 1 μm or higher and 30 μm or lower.

A method for treating a substrate, including a solvent processing step of supplying an organic solvent onto the substrate to treat the substrate, a drying step of drying the substrate to remove the organic solvent on the substrate, and a bake step of heating the substrate to thermally decompose an impurity adhering to the substrate, where the drying step and the bake step are performed in different chambers.