The present disclosure relates to a rapid thermal processing apparatus for rapid heat treatment of a substrate, and particularly, to increasing the accuracy in measuring the temperature of a substrate to be thermally processed by configuring a thermocouple for measuring the temperature of the substrate under the same conditions as the substrate to be thermally processed so as to be attached to and detached from the chamber, and the present disclosure provides a rapid thermal processing apparatus having a thermocouple installed to measure a temperature of a substrate to be thermally processed located inside a chamber, and the rapid thermal processing apparatus includes a mounting hole formed in the chamber, and a thermocouple kit inserted into and mounted to the mounting hole so that a bonding portion of a thermocouple wire is located at a thermocouple substrate extending into the chamber.

The present invention discloses a semiconductor device and an oxygen removal method thereof. The semiconductor device comprises: a process cavity, an oxygen removal pipe and an oxygen detection device, wherein the oxygen detection device comprises an oxygen detection pipe, a switching ball valve and an oxygen sensor; the oxygen detection pipe comprises a first pipe, a second pipe and a third pipe which are arranged in parallel and all connected to the oxygen removal pipe and the switching ball valve; the oxygen sensor is arranged on the third pipe; and, the switching ball valve is constructed in such a way that the switching ball valve communicates the first pipe with the second pipe in an oxygen removal stage and communicates the first pipe with the third pipe in an oxygen detection stage.

In an example, a method includes depositing a first sidewall spacer layer over a substrate having a layer stack including alternating layers of a nanosheet and a sacrificial layer, and a dummy gate formed over the layer stack, the first sidewall spacer layer formed over the dummy gate. The method includes depositing a metal-containing liner over the first sidewall spacer layer; forming a first sidewall spacer along the dummy gate by anisotropically etching the metal-containing liner and the first sidewall spacer layer; performing an anisotropic etch back process to form a plurality of vertical recesses in the layer stack; laterally etching the layer stack and form a plurality of lateral recesses between adjacent nanosheets; depositing a second sidewall spacer layer to fill the plurality of lateral recesses; and etching a portion of the second sidewall spacer layer to expose tips of the nanosheet layers.

There is provided a drying apparatus for covering an upper surface of the substrate with an uneven pattern formed thereon with a liquid film and subsequently drying the substrate, including: a first heat transfer part whose temperature is adjusted to a first temperature, wherein a first heat is transferred between the first heat transfer part and the substrate by a first temperature difference; a second heat transfer part whose temperature is adjusted to a second temperature different from the first temperature, wherein a second heat is transferred between the second heat transfer part and the substrate by a second temperature difference; and a controller configured to control the first temperature and the second temperature and to control a surface tension distribution of the liquid film so as to control an agglomeration of the liquid film.

Exemplary substrate processing systems may include chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures through the lid plate and a second plurality of apertures through the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the first plurality of apertures defined through the lid plate. Each lid stack of the plurality of lid stacks may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures.

Disclosed are a continuous heat treatment device and method for a sintered Nd—Fe—B magnet workpiece. The device comprises a first heat treatment chamber, a first cooling chamber, a second heat treatment chamber, and a second cooling chamber continuously disposed in sequence, as well as a transfer system disposed among the chambers to transfer the alloy workpiece or the metal workpiece; both the first cooling chamber and the second cooling chamber adopt a air cooling system, wherein a cooling air temperature of the first cooling chamber is 25° C. or above and differs from a heat treatment temperature of the first heat treatment chamber by at least 450° C.; a cooling air temperature of the second cooling chamber is 25° C. or above and differs from a heat treatment temperature of the second heat treatment chamber by at least 300° C. The continuous heat treatment device and method can improve the cooling rate and production efficiency and improve the properties and consistency of the products.

A component mounting system for mounting a component on a substrate, the mounting system comprising a component supplying unit configured to supply the component; a substrate holding unit configured to hold the substrate in an orientation such that a mounting face for mounting the component on the substrate is facing vertically downward; a head configured to hold the component from vertically below; and a head drive unit that, by causing vertically upward movement of the head holding the component, causes the head to approach the substrate holding unit to mount the component on the mounting face of the substrate.

An immersion lithographic apparatus is provided having a substrate table including a drain configured to receive immersion fluid which leaks into a gap between an edge of a substrate on the substrate table and an edge of a recess in which the substrate is located. A thermal conditioning system is provided to thermally condition at least the portion of the recess supporting the substrate by directing one or more jets of fluid onto a reverse side of the section supporting the substrate.

The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

A substrate processing apparatus that accommodates a substrate holder in which a substrate is placed in a processing container and forms a film onto the substrate, includes: a film thickness meter that measures a thickness of the film formed on the substrate; a state analysis unit that analyzes variation of the film thickness from a measurement result output from the film thickness meter at a plurality of measurement points where the film thickness on the substrate is measured; a singular point detection unit that, based on the analysis result, detects a measurement point where a difference from an adjacent measurement point deviates from a predetermined condition, as a singular point; and a singular point correction unit that corrects a measurement result of the singular point so that the difference of the film thickness between the singular point and the adjacent measurement point is within a predetermined condition.