According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including checking a leak from a process furnace before a substrate is processed. The checking includes: (a) measuring, by a partial pressure sensor provided at an exhaust pipe, an oxygen partial pressure value of a residual oxygen after the process furnace is vacuum-exhausted; (b) comparing the oxygen partial pressure value measured by the partial pressure sensor with a threshold value; and (c) when the oxygen partial pressure value is higher than the threshold value in (b), performing at least one among: purging the process furnace and evacuating the process furnace.

Exemplary processing chambers may include a body having sidewalls and a bottom plate. The bottom plate may define an exhaust opening and a gas inlet. The chambers may include a faceplate seated atop the body. The chambers may include a purge ring seated atop the bottom plate. The purge ring may include a ring body having an outer edge and an inner edge defining an open interior. The ring body may have a surface disposed against the bottom plate. The ring body may define an opening aligned with the exhaust opening. The surface may define a fluid port aligned and coupled with the gas inlet. The surface may define arcuate grooves extending into the fluid port. The arcuate grooves may be parallel with the inner and outer edges. The surface may define radial grooves extending from the open interior to an arcuate groove.

A holding apparatus including a holding substrate having a first main face on one side in a thickness direction thereof, and a heat generation section which is disposed in the holding substrate and generates heat when energized. The heat generation section includes a plurality of first heating elements arrayed in a planar direction orthogonal to the thickness direction of the holding substrate, and a second heating element disposed on a side toward the first main face in the thickness direction with respect to the plurality of first heating elements. Any one of the plurality of first heating elements is electrically connected to the second heating element in series through a first via extending in the thickness direction within the holding substrate.

A substrate fixing device includes a baseplate, an insulating layer over the baseplate, and an electrostatic chuck on the insulating layer. The insulating layer includes a heating element and a metal layer. The metal layer has a higher thermal conductivity than the insulating layer and is positioned closer to the electrostatic chuck than the heating element.

A wafer carrier assembly as described herein improves thermal control across a top surface thereof to maintain highly controlled deposition locations and thicknesses.

A substrate processing apparatus includes: a stage for performing at least one of heating and cooling on a substrate placed thereon and having a through-hole vertically penetrating the stage; a substrate support pin having an insertion portion inserted into the through-hole and configured so that the insertion portion protrudes from an upper surface of the stage through the through-hole; and a pin support member for supporting the substrate support pin. The substrate support pin has a flange portion located below a lower surface of the stage. The support member supports the substrate support pin by engagement with the flange portion. The through-hole is smaller than the flange portion. The substrate support pin includes a first member including the flange portion and a second member having the insertion portion. The first member has a sliding surface which slidably supports the second member.

A temperature measuring device that measures a temperature of a rotatable stage that holds a substrate, includes: a contact portion provided at a position that does not hinder placing of the substrate on the stage, and a temperature detector having a temperature sensor, and provided at a position separated from the temperature detection contact portion except when measuring a temperature. When measuring the temperature of the stage, the temperature detection contact portion and the temperature detector are relatively moved and brought into contact with each other in a state where the stage is not rotating to detect the temperature of the stage.

Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CH.sub.xF.sub.y gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH.sub.3—NF.sub.3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.

An apparatus for forming a solder bump on a substrate including a supporter configured to support the substrate to be provided thereon, a housing surrounding the supporter, a cover defining a manufacturing space in combination with the housing and including an edge heating zone along a perimeter thereof, the manufacturing space surrounding the supporter, and an oxide remover supply nozzle configured to supply an oxide remover to the manufacturing space may be provided.